Thermally evaporated CdS thin films for CdS/CdTe solar cells: Effect of substrate temperature on CdS layer

2021 ◽  
Vol 273 ◽  
pp. 115406
Author(s):  
A.A.I. Lakmal ◽  
R.K.K.G.R.G. Kumarasinghe ◽  
V.A. Seneviratne ◽  
Jiann-Yeu Chen ◽  
Jenn-Ming Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Substrate Temperature ◽  
Cdte Solar Cells ◽  
Cds Thin Films

Deposition Of Znte Thin Films By Close Spaced Sublimation: Structural And Electrical Studies

1997 ◽  
Vol 485 ◽  
Author(s):  
D. J. Goyal ◽  
P. G. Bilurkar ◽  
S. K. Thorat ◽  
N. V. Mate
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Copper Chloride ◽  
Low Cost ◽  
Alcoholic Solution ◽  
Cdte Solar Cells ◽  
Type Semiconductor ◽  
Znte Thin Films

AbstractZinc telluride has the potential of being a low-cost, environmentally stable, lowresistance and easily manufacturable back contact for CdS/CdTe solar cells. Close Spaced Sublimation (CSS) technique is used to deposit thin films of ZnTe. The results are reported in this study.The effects of substrate temperature and film thickness on the structural properties of the deposited thin films are studied. X-ray diffractograms show that all the films prominently exhibit presence of (111) and (200) orientations. However, the degree of the preferred orientation changes as a function of the film thickness. Increase in film thickness reduces the preferential orientation.The as deposited ZnTe thin films, being that of p-type semiconductor, are highly resistive. In order to effectively use these as contact to CdS/CdTe solar cells, they are made more conductive by doping copper. The doping is effected by dipping the films in alcoholic solution of copper chloride, followed by air annealing at 200°C. The resistivity of all the doped films drops drastically in the initial 10 minutes of annealing. The extent of doping is controlled by varying the dipping time.The effects of substrate temperature, film thickness and doping, on the stoichiometry of the films, are studied using Atomic Absorption Spectroscopy (AAS).

Effects of thiourea concentration on CdS thin films grown by chemical bath deposition for CdTe solar cells

2005 ◽  
Vol 480-481 ◽  
pp. 173-176 ◽  
Author(s):  
R. Mendoza-Pérez ◽  
G. Santana-Rodríguez ◽  
J. Sastre-Hernández ◽  
A. Morales-Acevedo ◽  
A. Arias-Carbajal ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Chemical Bath Deposition ◽  
Cdte Solar Cells ◽  
Cds Thin Films ◽  
Thiourea Concentration

Structural Properties of CdTe Thin Films for Solar Cell Applications Deposited on Flexible Foil Substrates

2009 ◽  
Vol 1165 ◽  
Author(s):  
Vasilios Palekis ◽  
Deidra Ranel Hodges ◽  
Don L Morel ◽  
Lee Stefanakos ◽  
Chris S Ferekides
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Growth Rate ◽  
Grain Size ◽  
Solar Cells ◽  
Solar Cell ◽  
Substrate Temperature ◽  
Source Temperature ◽  
Cdte Solar Cells ◽  
Cdte Thin Films

AbstractCadmium telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal band gap of 1.45 eV and its high optical absorption coefficient. The typical CdTe thin film solar cell is of the superstrate configuration where a window layer (CdS), the absorber (CdTe), and a back contact are deposited onto a glass slide coated with a transparent electrode. Substrate CdTe solar cells where the above listed films are deposited in reverse order are not common. In this study, the growth of CdTe thin films deposited on foil substrates by the close-spaced sublimation (CSS) has been investigated for the purpose of fabricating substrate based CdTe solar cells. The CdTe films were deposited at substrate temperatures (TSUB) in the range of 300 to 600°C, and source temperatures (TSRC) in the 600 to 650°C range. The effect of the substrate-source temperature variations on the growth rate, film structure and morphology were studied using XRD and SEM. It was found that for low substrate temperature and as the growth rate increases, grain size was the same but the films appeared to be more uniform and more densely packed with less or no pinholes. The growth rate increased as the source temperature increased. The substrate temperature clearly influences the grain growth and the preferred orientation. As the substrate temperature increased the growth rate decreased and the grain size varied from 2 to 6 μm. XRD analysis showed that with the increase in substrate temperature film orientation changes from preferential along the (111) direction to a mix of (111) (220) and (311).

scholarly journals C-VCalculations in CdS/CdTe Thin Films Solar Cells with aCdSxTe1-xInterlayer

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
A. Gonzalez-Cisneros ◽  
F. L. Castillo-Alvarado ◽  
J. Ortiz-Lopez ◽  
G. Contreras-Puente
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Solar Cells ◽  
Photovoltaic Cells ◽  
Cdte Film ◽  
Vapor Transport ◽  
Cdte Solar Cells ◽  
Cdte Thin Films ◽  
Cds Film ◽  
Theoretical Results

In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compoundCdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimentalC-V(capacitance versus voltage) characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010). The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film) and the close-spaced vapor transport (for CdTe film) techniques.

Sign in / Sign up

Export Citation Format

Share Document