Characterization of reduced pressure chemical vapor deposited Si0.8Ge0.2/Si multi-layers

2013 ◽  
Vol 16 (1) ◽  
pp. 126-130 ◽  
Author(s):  
Kyu-Hwan Shim ◽  
Hyeon Deok Yang ◽  
Yeon-Ho Kil ◽  
Jong-Han Yang ◽  
Woong-Ki Hong ◽  
...  
1996 ◽  
Vol 51-52 ◽  
pp. 179-186 ◽  
Author(s):  
L. Asinovsky ◽  
S. Fox ◽  
E. Karagiannis ◽  
M. Schroth ◽  
J.J. Sweeney

2005 ◽  
Vol 245-246 ◽  
pp. 39-50
Author(s):  
H.H. Radamson ◽  
J. Hållstedt

In this paper, the following issues: epitaxial growth, boron incorporation and electrical properties of Si1-x-yGexCy layers grown by reduced pressure chemical vapor deposition (RPCVD) are presented. Furthermore, diffusion of carbon and boron in silicon-based material is also discussed.


1987 ◽  
Vol 62 (9) ◽  
pp. 3740-3746 ◽  
Author(s):  
Minoru Nakamura ◽  
Toshiyuki Ohno ◽  
Nobutake Konishi ◽  
Kenji Miyata ◽  
Norimasa Kamezawa

2021 ◽  
Vol 131 ◽  
pp. 105888 ◽  
Author(s):  
F. Triendl ◽  
G. Pfusterschmied ◽  
G. Pobegen ◽  
S. Schwarz ◽  
W. Artner ◽  
...  

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