Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition

2012 ◽  
Vol 520 (7) ◽  
pp. 2711-2716 ◽  
Author(s):  
Y.H. Tan ◽  
C.S. Tan
2005 ◽  
Vol 245-246 ◽  
pp. 39-50
Author(s):  
H.H. Radamson ◽  
J. Hållstedt

In this paper, the following issues: epitaxial growth, boron incorporation and electrical properties of Si1-x-yGexCy layers grown by reduced pressure chemical vapor deposition (RPCVD) are presented. Furthermore, diffusion of carbon and boron in silicon-based material is also discussed.


1997 ◽  
Vol 308-309 ◽  
pp. 594-598 ◽  
Author(s):  
Y.J Mei ◽  
T.C Chang ◽  
J.C Hu ◽  
L.J Chen ◽  
Y.L Yang ◽  
...  

2006 ◽  
Vol 89 (11) ◽  
pp. 112119 ◽  
Author(s):  
M. Alevli ◽  
G. Durkaya ◽  
A. Weerasekara ◽  
A. G. U. Perera ◽  
N. Dietz ◽  
...  

2019 ◽  
Author(s):  
Y. Yamamoto ◽  
O. Skibitzki ◽  
M.A. Schubert ◽  
M. Scuderi ◽  
F. Reichmann ◽  
...  

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGK10
Author(s):  
Yuji Yamamoto ◽  
Oliver Skibitzki ◽  
Markus Andreas Schubert ◽  
Mario Scuderi ◽  
Felix Reichmann ◽  
...  

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