Kinetics of light-induced degradation in compensated boron-doped silicon investigated using photoluminescence and numerical simulation

2015 ◽  
Vol 33 ◽  
pp. 49-57
Author(s):  
K. Fraser ◽  
D. Blanc-Pelissier ◽  
S. Dubois ◽  
J. Veirman ◽  
M. Lemiti
Keyword(s):  
Numerical Simulation ◽  
Boron Doped ◽  
Doped Silicon ◽  
Kinetics Of

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Single-charge tunneling in uncoupled boron-doped silicon nanochains

2010 ◽  
Vol 484 (4-6) ◽  
pp. 258-260 ◽  
Author(s):  
D.D.D. Ma ◽  
K.S. Chan ◽  
D.M. Chen ◽  
S.T. Lee
Keyword(s):  
Single Charge ◽  
Boron Doped ◽  
Doped Silicon ◽  
Charge Tunneling

Stability Study of Silicon Heterojunction Solar cells fabricated with Gallium‐ and Boron‐doped Silicon Wafers

Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Stability Study ◽  
Silicon Wafers ◽  
Heterojunction Solar Cells ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Heterojunction Solar Cells

scholarly journals Numerical Simulation Model for Granulation Kinetics of Iron Ores

2005 ◽  
Vol 45 (4) ◽  
pp. 500-505 ◽  
Author(s):  
Junya KANO ◽  
Eiki KASAI ◽  
Fumio SAITO ◽  
Takazo KAWAGUCHI
Keyword(s):  
Numerical Simulation ◽  
Simulation Model ◽  
Iron Ores ◽  
Kinetics Of

scholarly journals Kinetics of the active media of nuclear-pumped lasers

1993 ◽  
Vol 11 (4) ◽  
pp. 655-661 ◽  
Author(s):  
A.M. Boichenko ◽  
A.V. Karelin ◽  
O.V. Sereda ◽  
S.I. Yakovlenko
Keyword(s):  
Numerical Simulation ◽  
High Power ◽  
Short Wavelength ◽  
Noble Gases ◽  
Excimer Lasers ◽  
Active Media ◽  
Metal Vapors ◽  
Kinetics Of

Numerical simulation of active media nuclear-pumped lasers on noble gases and their mixtures with metal vapors are presented. Prospects of creation of high-power short-wavelength nuclear-pumped excimer lasers are discussed.

Dynamic characteristics of dislocations in highly boron-doped silicon

2001 ◽  
Vol 89 (10) ◽  
pp. 5788-5790 ◽  
Author(s):  
I. Yonenaga ◽  
T. Taishi ◽  
X. Huang ◽  
K. Hoshikawa
Keyword(s):  
Dynamic Characteristics ◽  
Boron Doped ◽  
Doped Silicon
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