Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE

2016 ◽  
Vol 42 ◽  
pp. 273-276 ◽  
Author(s):  
M. Bouzidi ◽  
Z. Benzarti ◽  
I. Halidou ◽  
S. Soltani ◽  
Z. Chine ◽  
...  
Keyword(s):  
Band Gap ◽  
Si Doped ◽  
1999 ◽  
Vol 74 (1) ◽  
pp. 102-104 ◽  
Author(s):  
In-Hwan Lee ◽  
J. J. Lee ◽  
P. Kung ◽  
F. J. Sanchez ◽  
M. Razeghi

2020 ◽  
Vol 12 (23) ◽  
pp. 10097
Author(s):  
Hongni Zhang ◽  
Wenzheng Du ◽  
Tong Zhao ◽  
Rajeev Ahuja ◽  
Zhao Qian

Through Density Functional Theory (DFT), we have unveiled the atomic structures, adsorption characteristics and electronic structures of the poisonous and explosive vapor, m-dinitrobenzene (m-DNB), on pure, defective and various doped AlN nanosheets from a physical perspective. It is found that the adsorption energy, band gap change and sensitivity to the vapor are significantly increased through atomic-scale modification of the nanosheet. The AlN monolayer with Al-N divacancy has the largest adsorption energy and has potential to be utilized as adsorption or filtration materials for m-DNB vapor. The Si-doped AlN nanosheet possesses a much larger band gap change (−0.691 eV) than the pure nanosheet (−0.092 eV) after adsorption and has a moderate adsorption energy, which could be candidate material for explosive vapor sensing. This theoretical work is proposed to provide guidance and clue for experimentalists to develop more effective two-dimensional materials for environmental safety and sustainability.


1998 ◽  
Vol 189-190 ◽  
pp. 546-550 ◽  
Author(s):  
R Seitz ◽  
C Gaspar ◽  
T Monteiro ◽  
E Pereira ◽  
M Leroux ◽  
...  

1999 ◽  
Vol 86 (8) ◽  
pp. 4400-4402 ◽  
Author(s):  
M. Yoshikawa ◽  
M. Kunzer ◽  
J. Wagner ◽  
H. Obloh ◽  
P. Schlotter ◽  
...  

2016 ◽  
Vol 4 (6) ◽  
pp. 1345-1350 ◽  
Author(s):  
K. E. Hnida ◽  
S. Bäßler ◽  
J. Mech ◽  
K. Szaciłowski ◽  
R. P. Socha ◽  
...  

Indium antimonide thin films were fabricated by pulse electrodeposition. Band gap widening due to quantum confinement (0.17 eV) and the Burstein–Moss effect (0.19 eV) was observed. The stoichiometric InSb films showed S coefficient values higher than those obtained by MOCVD.


2005 ◽  
Vol 87 (19) ◽  
pp. 191906 ◽  
Author(s):  
M. Gao ◽  
Y. Lin ◽  
S. T. Bradley ◽  
S. A. Ringel ◽  
J. Hwang ◽  
...  
Keyword(s):  
Band Gap ◽  

2014 ◽  
Vol 90 (7) ◽  
Author(s):  
Martin Feneberg ◽  
Sarah Osterburg ◽  
Karsten Lange ◽  
Christian Lidig ◽  
Bernd Garke ◽  
...  

1998 ◽  
Vol 189-190 ◽  
pp. 687-691 ◽  
Author(s):  
Xiong Zhang ◽  
Soo-Jin Chua ◽  
Wei Liu ◽  
Kok-Boon Chong
Keyword(s):  
Band Gap ◽  

Sign in / Sign up

Export Citation Format

Share Document