N–SrTiO3/p-GaN heterojunctions: A white light-emitting diode with a broad luminescence spectrum

2021 ◽  
Vol 126 ◽  
pp. 105659
Author(s):  
Annan Yang ◽  
Bin Yao ◽  
Zhanhui Ding ◽  
Rui Deng ◽  
Yongfeng Li
2012 ◽  
Vol 51 ◽  
pp. 09MH03
Author(s):  
Byoung Wook Kwon ◽  
Dong Ick Son ◽  
Dong-Hee Park ◽  
Heon-Jin Choi ◽  
Won-Kook Choi

2017 ◽  
Vol 41 (18) ◽  
pp. 9826-9839 ◽  
Author(s):  
Boddula Rajamouli ◽  
Rachna Devi ◽  
Abhijeet Mohanty ◽  
Venkata Krishnan ◽  
Sivakumar Vaidyanathan

The red light emitting diode (LED) was fabricated by using europium complexes with InGaN LED (395 nm) and shown digital images, corresponding CIE color coordinates (red region) as well as obtained highest quantum yield of the thin film (78.7%).


2013 ◽  
Vol 211 (3) ◽  
pp. 651-655 ◽  
Author(s):  
Jorge Oliva ◽  
Elder De la Rosa ◽  
Luis Diaz-Torres ◽  
Anvar Zakhidov

2010 ◽  
Author(s):  
Kyung-Mi Moon ◽  
Se-Hwan An ◽  
Hyung-Kun Kim ◽  
Jung-Hye Chae ◽  
Yong-Jo Park

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