Low Energy Ar+ Ions Scattering from SiO2 (001)<Ῑ10> Surface under Grazing Incidence

This article presents the results of computer modeling of small-angle scattering of Ar+ ions from the surface of the SiO2 thin film under bombardment by low-energy. The study of the trajectory of the scattered ions showed that the trajectories with two focuses are observed not only near the center of the semichannel but also nearby the surface of the atomic chain. An increase in the value of the initial energy of incident particles leads to a narrowing of the trajectory of the scattered ions, which leads to the appearance of low-intensity peaks in the energy spectrum of the scattered ions.

Investigation of Defect InP(001) Surface by Low Energy Ion Scаttering Spectroscopy

In this paper presents the computer simulation results on the investigations of the ion scattering processe on the defect InP(001)<110>,<ī10> surface under low-energy grazing ion bombardment have been presented. The peculiarities trajectories of the scattered ions from surface defect, atomic chain and semichannel have been investigated by computer simulation. It was found some trajectories nearby surface atomic chain which have loop shape and a line form. At grazing ion incidence, from a correlation of the experimental and calculated energy distributions of the scattered particles, one may determine a spatial extension of the missing atom on the monocrystal surface damaged by the ion bombardment.

Design of multifunctional spin logic gates based on manganese porphyrin molecules connected to graphene electrodes

The spin-resolved transport properties of molecular logic devices composed of two Mn porphyrin molecules connected to each other via a six-carbon atomic chain were studied using the non-equilibrium Green’s function...

Telluride Te2I: Electronic properties of one-dimensional atomic chains structure

Semiconductor tellurium is an excellent performance material, tellurium and its compounds have been extensive researched in the low-dimensional field. Inspired by the synthesis of a one-dimensional tellurium atomic chains, we predict a new one-dimensional Te2I single-atomic chain structure based on firstprinciples. Using first-principles calculations, Te2I single-atomic chain has an exfoliated energy of 137.95 meV, suggesting that the exfoliation of atomic chains materials from the bulk phase could be feasible. The single-atomic chain structure is an indirect band gap semiconductor with a band gap of 1.51 eV. In addition, its dynamic and thermodynamic properties indicate that the structure is stable at room temperature. Remarkably, it exhibits good electronic conductivity and a large difference in electron and hole mobilities, indicating that it is favorable for the migration and separation of photogenerated carriers. The absorption spectrum of one-dimensional Te2I single-atomic chain exhibits a strong light-harvesting ability in the ultraviolet region, suggesting its potential application in optoelectronic devices