Temperature dependence of electrical behaviour of inhomogeneous Ni/Au/4H–SiC Schottky diodes

2022 ◽  
Vol 140 ◽  
pp. 106413
Author(s):  
J. Osvald ◽  
L. Hrubčín ◽  
B. Zaťko
Keyword(s):  
Temperature Dependence ◽  
Schottky Diodes ◽  
Electrical Behaviour

The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes

2019 ◽  
Vol 45 (2) ◽  
pp. 180-184
Author(s):  
I. B. Chistokhin ◽  
M. S. Aksenov ◽  
N. A. Valisheva ◽  
D. V. Dmitriev ◽  
I. V. Marchishin ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Temperature Dependence ◽  
Schottky Diodes ◽  
Layer Surface

Temperature dependence of the ideality factor of GaAs and Si schottky diodes

1995 ◽  
Vol 152 (2) ◽  
pp. 563-571 ◽  
Author(s):  
T. C. Lee ◽  
T. P. Chen ◽  
H. L. Au ◽  
S. Fung ◽  
C. D. Beling
Keyword(s):  
Temperature Dependence ◽  
Ideality Factor ◽  
Schottky Diodes

Modelling electrical behaviour of nonuniform AlSi Schottky diodes

1981 ◽  
Vol 24 (10) ◽  
pp. 897-904 ◽  
Author(s):  
D. Dascalu ◽  
Gh. Brezeanu ◽  
P.A. Dan ◽  
C. Dima
Keyword(s):  
Schottky Diodes ◽  
Electrical Behaviour

On the temperature dependence of the barrier height and the ideality factor in high voltage NinGaAs schottky diodes

1996 ◽  
Vol 39 (10) ◽  
pp. 1457-1462 ◽  
Author(s):  
M. Nathan ◽  
Z. Shoshani ◽  
G. Ashkinazi ◽  
B. Meyler ◽  
O. Zolotarevski
Keyword(s):  
Temperature Dependence ◽  
Barrier Height ◽  
High Voltage ◽  
Ideality Factor ◽  
Schottky Diodes

Ohmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices T

2011 ◽  
Vol 679-680 ◽  
pp. 816-819 ◽  
Author(s):  
Amador Pérez-Tomás ◽  
A. Fontserè ◽  
Marcel Placidi ◽  
N. Baron ◽  
Sébastien Chenot ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Temperature Dependence ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Schottky Diodes ◽  
Electron Gas ◽  
Temperature Measurements ◽  
Back Contact ◽  
Dimensional Electron ◽  
Dimensional Electron Gas

The temperature dependence of Ohmic contacts to GaN devices is investigated in this paper via by measuring TLM contact resistances TLM vs Tas a function of temperature. measurements. In particular, the two types of Ohmic contacts are considered: (1) Contacts to highly doped implanted regions (such as the MOSFET drain/source contacts or the back contact of Schottky diodes) and (2) contacts to the 2 dimensional electron gas (2DEG) of an AlGaN/GaN heterojunction.

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