Modelling electrical behaviour of nonuniform AlSi Schottky diodes

1981 ◽  
Vol 24 (10) ◽  
pp. 897-904 ◽  
Author(s):  
D. Dascalu ◽  
Gh. Brezeanu ◽  
P.A. Dan ◽  
C. Dima
Keyword(s):  
Schottky Diodes ◽  
Electrical Behaviour

Influence of Fabrication Conditions on the Electrical Behaviour of Polymer Schottky Diodes

1997 ◽  
Vol 85 (1-3) ◽  
pp. 1351-1352 ◽  
Author(s):  
H.L. Gomes ◽  
G.W. Jones ◽  
D.M. Taylor
Keyword(s):  
Schottky Diodes ◽  
Electrical Behaviour

Ion-Beam Induced Modifications of Titanium Schottky Barrier on 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 729-732 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Corrado Bongiorno ◽  
Sebania Libertino ◽  
Francesco La Via ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Schottky Diodes ◽  
Analytical Techniques ◽  
Interfacial Region ◽  
Electrical Behaviour ◽  
Dopant Deactivation

The effects of ion irradiation on the Ti/4H-SiC Schottky barrier are discussed. The Ti/SiC interfacial region of test Schottky diodes was irradiated with 8 MeV Si+4 ions at fluences between 1×109 and 1×1012 ions/cm2. By increasing ion fluence, an increase of the Schottky barrier FB was observed, from FB=1.05 eV in the non-irradiated sample to FB =1.21 eV after irradiation at the highest fluence, accompanied by a decrease of the leakage current. Using different experimental analytical techniques enabled us to correlate the modification of the interfacial region with the contacts electrical behaviour. In particular, the structural and electrical modifications in the nearinterface region (different orientation of the Ti film, defects in the epilayer, dopant deactivation) were responsible for the change of the Ti barrier after irradiation.

Schottky diodes based on 2D materials for environmental gas monitoring: a review on emerging trends, recent developments and future perspectives

2021 ◽  
Author(s):  
Minu Mathew ◽  
Chandra Sekhar Rout
Keyword(s):  
Gas Sensing ◽  
2D Materials ◽  
Schottky Diodes ◽  
High Sensitivity ◽  
Future Perspectives ◽  
Working Temperature ◽  
Emerging Trends ◽  
Gas Sensing Properties ◽  
Recent Developments ◽  
Sensitivity And Selectivity

This review details the fundamentals, working principles and recent developments of Schottky junctions based on 2D materials to emphasize their improved gas sensing properties including low working temperature, high sensitivity, and selectivity.

Methodology for Analysis of Schottky Diode Failures

2010 ◽  
Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek
Keyword(s):  
Failure Mode ◽  
Schottky Diode ◽  
Failure Modes ◽  
Schottky Diodes ◽  
Failure Mechanisms ◽  
Forward Voltage ◽  
Fast Switching ◽  
Voltage Drops ◽  
The Common

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.

The Use of TMAH to Etch Silicon and Expose Metal Bridging Failures

2000 ◽  
Author(s):  
Mark Morris ◽  
James Mohr ◽  
Esteban Ortiz ◽  
Steven Englebretson
Keyword(s):  
Failure Mechanism ◽  
Schottky Diodes ◽  
Tetramethylammonium Hydroxide ◽  
Novel Approach ◽  
Failure Location ◽  
Metal Etching ◽  
Plastic Mold

Abstract Determination of metal bridging failures on plastic encapsulated devices is difficult due to the metal etching effects that occur while removing many of the plastic mold compounds. Typically, the acids used to remove the encapsulation are corrosive to the metals that are found within the device. Thus, decapsulation can result in removal of the failure mechanism. Mechanical techniques are often not successful due to damage that results in destruction of the die and failure mechanism. This paper discusses a novel approach to these types of failures using a silicon etch and a backside evaluation. The desirable characteristics of the technique would be to remove the silicon and leave typical device metals unaffected. It would also be preferable that the device passivation and oxides not be etched so that the failure location is not disturbed. The use of Tetramethylammonium Hydroxide (TMAH), was found to fit these prerequisites. The technique was tested on clip attached Schottky diodes that exhibited resistive shorting. The use of the TMAH technique was successful at exposing thin solder bridges that extruded over the edge of the die resulting in failure.

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