Calculations of selenium and cadmium concentration dependent elastic and thermal properties of zinc-blende specimens under Cd Zn1-Se Te1- quaternary system with density functional theory

2021 ◽  
Vol 27 ◽  
pp. 102136
Author(s):  
Sayantika Chanda ◽  
Manish Debbarma ◽  
Debankita Ghosh ◽  
Subhendu Das ◽  
Bimal Debnath ◽  
...  
2017 ◽  
Vol 26 (46) ◽  
Author(s):  
Víctor Mendoza-Estrada ◽  
Melissa Romero-Baños ◽  
Viviana Dovale-Farelo ◽  
William López-Pérez ◽  
Álvaro González-García ◽  
...  

In this research, first-principles calculations were carried out within the density functional theory (DFT) framework, using LDA and GGA, in order to study the structural, elastic, electronic and thermal properties of InAs in the zinc-blende structure. The results of the structural properties (a, B0, ) agree with the theoretical and experimental results reported by other authors. Additionally, the elastic properties, the elastic constants (C11, C12 and C44), the anisotropy coefficient (A) and the predicted speeds of the sound ( , , and ) are in agreement with the results reported by other authors. In contrast, the shear modulus (G), the Young's modulus (Y) and the Poisson's ratio (v) show some discrepancy with respect to the experimental values, although, the values obtained are reasonable. On the other hand, it is evident the tendency of the LDA and GGA approaches to underestimate the value of the band-gap energy in semiconductors. The thermal properties (V, , θD yCV) of InAs, calculated using the quasi-harmonic Debye model, are slightly sensitive as the temperature increases. According to the stability criteria and the negative value of the enthalpy of formation, InAs is mechanically and thermodynamically stable. Therefore, this work can be used as a future reference for theoretical and experimental studies based on InAs.


2008 ◽  
Vol 92 (10) ◽  
pp. 101917 ◽  
Author(s):  
Changzeng Fan ◽  
Qiang Wang ◽  
Lixiang Li ◽  
Suhong Zhang ◽  
Yan Zhu ◽  
...  

1996 ◽  
Vol 423 ◽  
Author(s):  
J. Elsner ◽  
M. Haugk ◽  
Th. Frauenheim

AbstractA density-functional theory based nonorthogonal tight-binding scheme is used to investigate the nonpolar surfaces of GaN in the wurtzite and zinc-blende phases. In III-V semiconductors the nonpolar surfaces mainly reconstruct by a bond-length conserving rotation of the surface atoms. In contrast to that for all nonpolar GaN surfaces this bond-length is shortened by ≈3 − 4%. We furthermore find the rotation angle to be significantly smaller than could be expected from results for GaAs and GaP.


2014 ◽  
Vol 37 (1) ◽  
pp. 51-60 ◽  
Author(s):  
Marcus V.J. Rocha ◽  
Hudson W.P. de Carvalho ◽  
Victor H.V. Sarmento ◽  
Aldo F. Craievich ◽  
Teodorico C. Ramalho

Author(s):  
S. K. TRIPATHY ◽  
V. KUMAR

First principles calculation within density functional theory (DFT) has been used to calculate the electronic, optical and thermal properties of ZnSiP2 chalcopyrite semiconductor. The result of band structure, total density of state (DOS) and partial density of state (PDOS) have been discussed. The dielectric constant, refractive index, reflectivity, absorption coefficients, extinction coefficient and loss function have been presented in energy range of 0-25 eV. The values of melting point, Debye temperature, heat of formation and bulk modulus have been calculated. The calculated values of these parameters are in good agreement with the experimental values and the value reported by previous researchers.


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