The tribovoltaic effect and electron transfer at a liquid-semiconductor interface

Nano Energy ◽  
2020 ◽  
Vol 76 ◽  
pp. 105070 ◽  
Author(s):  
Shiquan Lin ◽  
Xiangyu Chen ◽  
Zhong Lin Wang
2021 ◽  
Vol 19 (11) ◽  
pp. 102-107
Author(s):  
Mohammed Kamilharmoosh ◽  
Mohsin A. Hassooni ◽  
Hadi J.M. Al-Agealy

The dye–semiconductor interface between N749 sensitized and zinc semiconductor (ZnSe) has been investigated and studied according to quantum transition theory with focusing on the electron transfer processes from the N749 sensitized (donor) to the ZnSe semiconductor (acceptor). The electron transfer rate constant and the orientation energy were studied and evaluated depended on the polarity of solvents according to refractive index and dielectric constant coefficient of solvents and ZnSe semiconductor. Attention focusing on the influence of orientation energies on the behavior of electron transfer rate constant. Differentdata of rate constant was discussion with orientation energy and effective driving energy for N749-ZnSe system. Furthermore, the electron transfer rate constant is increased with less orientation energy at less effective driving energy while the electron transfer rate constant increased with large orientation energy with large effective driving energy, as seen as the electron transfer rate reach to 1.3109 × 1011 with less orientation energy has 0.188708eV at effective driving energy E=0.22eV comparing the rate reach to 9.7207× 10−96 with driving energy E=1.89eV and same orientation energy. In general, the electron transfer rate constant increases with increases the coupling coefficient of system, its indicate that alignment of energy levels are very good between N749 sensitized metal and ZnSe semiconductor.


Nano Energy ◽  
2021 ◽  
Vol 83 ◽  
pp. 105810 ◽  
Author(s):  
Mingli Zheng ◽  
Shiquan Lin ◽  
Zhen Tang ◽  
Yawei Feng ◽  
Zhong Lin Wang

1985 ◽  
Vol 54 ◽  
Author(s):  
C. Mailhiotand ◽  
C. B. Duke

ABSTRACTA microscopic many-electron model is utilized to calculate the self-consistent one-electron potential in the vicinity of a metal-semiconductor or semiconductor-semiconductor interface. The boundary conditions ensuring thermal, mechanical and electron-transfer equilibrium are imposed explicitly. Numerical calculations predict the validity of Schottky's phenomenological boundary condition for metal-semiconductor contacts and the applicability of the electron affinity rule for semiconductor heterojunctions. The occurrence of interfacial atomic rearrangements and/or chemical reactions is incorporated into the model via the inclusion of charge centers near the interface.


Author(s):  
P. Bonhomme ◽  
A. Beorchia

We have already described (1.2.3) a device using a pockel's effect light valve as a microscopical electron image converter. This converter can be read out with incoherent or coherent light. In the last case we can set in line with the converter an optical diffractometer. Now, electron microscopy developments have pointed out different advantages of diffractometry. Indeed diffractogram of an image of a thin amorphous part of a specimen gives information about electron transfer function and a single look at a diffractogram informs on focus, drift, residual astigmatism, and after standardizing, on periods resolved (4.5.6). These informations are obvious from diffractogram but are usualy obtained from a micrograph, so that a correction of electron microscope parameters cannot be realized before recording the micrograph. Diffractometer allows also processing of images by setting spatial filters in diffractogram plane (7) or by reconstruction of Fraunhofer image (8). Using Electrotitus read out with coherent light and fitted to a diffractometer; all these possibilities may be realized in pseudoreal time, so that working parameters may be optimally adjusted before recording a micrograph or before processing an image.


2004 ◽  
Vol 71 ◽  
pp. 1-14
Author(s):  
David Leys ◽  
Jaswir Basran ◽  
François Talfournier ◽  
Kamaldeep K. Chohan ◽  
Andrew W. Munro ◽  
...  

TMADH (trimethylamine dehydrogenase) is a complex iron-sulphur flavoprotein that forms a soluble electron-transfer complex with ETF (electron-transferring flavoprotein). The mechanism of electron transfer between TMADH and ETF has been studied using stopped-flow kinetic and mutagenesis methods, and more recently by X-ray crystallography. Potentiometric methods have also been used to identify key residues involved in the stabilization of the flavin radical semiquinone species in ETF. These studies have demonstrated a key role for 'conformational sampling' in the electron-transfer complex, facilitated by two-site contact of ETF with TMADH. Exploration of three-dimensional space in the complex allows the FAD of ETF to find conformations compatible with enhanced electronic coupling with the 4Fe-4S centre of TMADH. This mechanism of electron transfer provides for a more robust and accessible design principle for interprotein electron transfer compared with simpler models that invoke the collision of redox partners followed by electron transfer. The structure of the TMADH-ETF complex confirms the role of key residues in electron transfer and molecular assembly, originally suggested from detailed kinetic studies in wild-type and mutant complexes, and from molecular modelling.


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