External quantum efficiency of Pt/n-GaN Schottky diodes in the spectral range 5–500nm

Author(s):  
Shahid Aslam ◽  
Robert E. Vest ◽  
David Franz ◽  
Feng Yan ◽  
Yuegang Zhao ◽  
...  
2016 ◽  
Vol 858 ◽  
pp. 1206-1209 ◽  
Author(s):  
Anand V. Sampath ◽  
Yoajia Chen ◽  
Q. Zhou ◽  
Ryan W. Enck ◽  
Gregory A. Garrett ◽  
...  

We report on improvement in the deep ultraviolet (DUV) photoresponse of SiC based detectors through the development of n- AlxGa1-xN / i-p SiC heterojunction photodiodes. Fabricated photodiodes have high external quantum efficiency (EQE), greater than 60%, over a wide spectral range from 215-255 nm that is ~10x enhancement in performance over comparable homogenous SiC photodiodes at the shortest wavelength. This is attributed to photogeneration of carriers within the SiC depletion region by DUV illumination of the diode through the n- AlxGa1-xN “window”, as compared to a typical homogenous SiC n-i-p structure where the carriers are photogenerated in the n-type neutral region, resulting in more efficient collection of holes through drift


Author(s):  
Л.С. Лунин ◽  
О.В. Девицкий ◽  
А.А. Кравцов ◽  
A.С. Пащенко

A method of the production of polyvinyl butyral films with silver nanoparticles was developed. Properties of the resulting films as anti-reflecting coatings for silicon photovoltaic converters (photoconverters) were studied. The experiments were carried out on samples with and without Si3N4 coating. It was indicated that, at maximum concentration of silver nanoparticles (7 mmol/l), the increase in the external quantum efficiency in the spectral range from 500 to 1000 nm was more than 20 % for the samples without Si3N4 coating. In the case of the engineered functional coatings onto the photoconverters with Si3N4, the quantum efficiency increased on average by 10 % in the range from 400 to 1000 nm, and by 15–20 % in the range from 320 to 400 nm.


2020 ◽  
Vol 14 (1) ◽  
pp. 011004
Author(s):  
Shubhra S. Pasayat ◽  
Chirag Gupta ◽  
Matthew S. Wong ◽  
Ryan Ley ◽  
Michael J. Gordon ◽  
...  

2021 ◽  
pp. 428-432
Author(s):  
Liqun Liu ◽  
Chang Cai ◽  
Zejian Zhang ◽  
Shitong Zhang ◽  
Jian Deng ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yuwei Guo ◽  
Sofia Apergi ◽  
Nan Li ◽  
Mengyu Chen ◽  
Chunyang Yin ◽  
...  

AbstractPerovskite light emitting diodes suffer from poor operational stability, exhibiting a rapid decay of external quantum efficiency within minutes to hours after turn-on. To address this issue, we explore surface treatment of perovskite films with phenylalkylammonium iodide molecules of varying alkyl chain lengths. Combining experimental characterization and theoretical modelling, we show that these molecules stabilize the perovskite through suppression of iodide ion migration. The stabilization effect is enhanced with increasing chain length due to the stronger binding of the molecules with the perovskite surface, as well as the increased steric hindrance to reconfiguration for accommodating ion migration. The passivation also reduces the surface defects, resulting in a high radiance and delayed roll-off of external quantum efficiency. Using the optimized passivation molecule, phenylpropylammonium iodide, we achieve devices with an efficiency of 17.5%, a radiance of 1282.8 W sr−1 m−2 and a record T50 half-lifetime of 130 h under 100 mA cm−2.


2019 ◽  
Vol 87 (3) ◽  
pp. 30101 ◽  
Author(s):  
Abdel-baset H. Mekky

Semiconductor materials cadmium sulfide (CdS) and cadmium telluride (CdTe) are employed in the fabrication of thin film solar cells of relatively excessive power conversion efficiency and low producing price. Simulations of thin film CdS/CdTe solar cell were carried out using SCAPS-1D. The influence of temperature field on the variation of CdTe solar cell parameters such as current–voltage, capacitance–voltage characteristics and the external quantum efficiency was investigated theoretically. For use temperatures, one obtains the external quantum efficiency has the same profiles. However, the effect of the temperature on the Mott-Schottky curves is slightly noted by variations on the characteristics. This conclusion can be used by solar cell manufacturers to improve the solar cell parameters with the biggest possible gain in device performance.


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