Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon

2005 ◽  
Vol 552 (1-2) ◽  
pp. 20-26 ◽  
Author(s):  
M. Bruzzi ◽  
D. Bisello ◽  
L. Borrello ◽  
E. Borchi ◽  
M. Boscardin ◽  
...  
Keyword(s):  
High Resistivity ◽  
Czochralski Silicon ◽  
P Type

Characterization of Intrinsic Defects in High-Purity High-Resistivity p-Type 6H-SiC

2008 ◽  
Vol 47 (9) ◽  
pp. 7052-7055 ◽  
Author(s):  
Hideharu Matsuura ◽  
Hirokazu Yanase ◽  
Miyuki Takahashi
Keyword(s):  
High Purity ◽  
High Resistivity ◽  
Intrinsic Defects ◽  
P Type

EBIC Characterization of Oxygen Precipitation and Denuded Zone in Intrinsically Gettered P-Type Czochralski Silicon

1998 ◽  
Vol 63-64 ◽  
pp. 97-104
Author(s):  
S. Spiga ◽  
Antonio Castaldini ◽  
Anna Cavallini ◽  
Maria Luisa Polignano ◽  
F. Cazzaniga
Keyword(s):  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
P Type

A p-Type PbS Quantum Dot Ink with Improved Stability for Solution Processable Optoelectronics

2021 ◽  
Author(s):  
Fiaz Ahmed ◽  
John Hardin Dunlap ◽  
Perry J. Pellechia ◽  
Andrew Greytak
Keyword(s):  
Quantum Dot ◽  
Ligand Exchange ◽  
Chemical Characterization ◽  
Single Step ◽  
Improved Stability ◽  
Solution Processable ◽  
P Type ◽  
Pbs Quantum Dot

A highly stable p-type PbS-QDs ink is prepared using a single-step biphasic ligand exchange route, overcoming instability encountered in previous reports. Chemical characterization of the ink reveals 3-mercaptopriopionic acid (MPA)...

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