Structural and electrical characterization of silicided Ni/Au contacts formed at low temperature (<300 °C) on p-type [001] silicon

2011 ◽  
Vol 110 (12) ◽  
pp. 123510 ◽  
Author(s):  
A. Alberti ◽  
P. Badalà ◽  
G. Pellegrino ◽  
A. Santangelo
Keyword(s):  
Low Temperature ◽  
Electrical Characterization ◽  
P Type

Preparation and Electrical Characterization of B-N Codoped p-type MgZnO Film

2020 ◽  
Vol 41 (10) ◽  
pp. 1262-1268
Author(s):  
Li-li GAO ◽  
◽  
Xu WANG
Keyword(s):  
Electrical Characterization ◽  
Mgzno Film ◽  
P Type

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

2003 ◽  
Vol 18 (6) ◽  
pp. 554-559 ◽  
Author(s):  
F Moscatelli ◽  
A Scorzoni ◽  
A Poggi ◽  
G C Cardinali ◽  
R Nipoti
Keyword(s):  
Ohmic Contacts ◽  
Electrical Characterization ◽  
P Type ◽  
Ion Implanted

Electrical characterization of Cu-doped CdS p-type thin film transistors

2021 ◽  
Author(s):  
D. Berman-Mendoza ◽  
O. I. Diaz-Grijalva ◽  
R. López-Delgado ◽  
A. Ramos-Carrazco ◽  
M. E. Alvarez-Ramos ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Characterization ◽  
P Type

scholarly journals Low Temperature Formation of SiO2 Thin Films by Nitric Acid Oxidation of Si and Electrical Characterization of the Film

Hyomen Kagaku ◽  
2008 ◽  
Vol 29 (8) ◽  
pp. 498-502 ◽  
Author(s):  
Taketoshi MATSUMOTO ◽  
Kentaro IMAMURA ◽  
Hikaru KOBAYASHI
Keyword(s):  
Thin Films ◽  
Nitric Acid ◽  
Low Temperature ◽  
Electrical Characterization ◽  
Acid Oxidation ◽  
Nitric Acid Oxidation

Investigation of carrier transport mechanisms in the Cu–Zn–Se based hetero-structure grown by sputtering technique

2018 ◽  
Vol 96 (7) ◽  
pp. 816-825 ◽  
Author(s):  
H.H. Güllü ◽  
M. Terlemezoğlu ◽  
Ö. Bayraklı ◽  
D.E. Yıldız ◽  
M. Parlak
Keyword(s):  
Barrier Height ◽  
Carrier Transport ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Band Gap Energy ◽  
Zero Bias ◽  
Hetero Structure ◽  
Current Voltage ◽  
P Type

In this paper, we present results of the electrical characterization of n-Si/p-Cu–Zn–Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current–voltage measurements in the temperature range of 220–360 K, room temperature, and frequency-dependent capacitance–voltage and conductance-voltage measurements. The anomaly in current–voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm−2K−2 by means of modified Richardson plot.

Realization in Clean Room and Electrical Characterization of P-Type Thin Film Transistor

1998 ◽  
pp. 99-102
Author(s):  
O. Bonnaud ◽  
D. Guillet ◽  
F. Raoult ◽  
A. C. Salaun
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Electrical Characterization ◽  
Clean Room ◽  
P Type

Electrical Characterization of Low Temperature PECVD Oxides for TSV Applications

2018 ◽  
Vol 2018 (1) ◽  
pp. 000728-000733
Author(s):  
Piotr Mackowiak ◽  
Rachid Abdallah ◽  
Martin Wilke ◽  
Jash Patel ◽  
Huma Ashraf ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Charge Densities ◽  
Doped Silicon

Abstract In the present work we investigate the quality of low temperature Plasma Enhanced Chemical Vapor Deposition (PECVD) and plasma treated Tetraethyl orthosilicate (TEOS)-based TSV-liner films. Different designs of Trough Silicon Via (TSV) Test structures with 10μm and 20μm width and a depth of 100μm have been fabricated. Two differently doped silicon substrates have been used – highly p-doped and moderately doped. The results for break-through, resistivity and capacitance for the 20μm structures show a better performance compared to the 10μm structures. This is mainly due to increased liner thickness in the reduced aspect ratio case. Lower interface traps and oxide charge densities have been observed in the C-V measurements results for the 10μm structures.

Electrical Characterization of Defects in p-Type SiC Using Recombination Induced Conductivity Inversion

2005 ◽  
Vol 483-485 ◽  
pp. 551-554
Author(s):  
Bharat Krishnan ◽  
Yaroslav Koshka
Keyword(s):  
Electrical Characterization ◽  
Thick Layer ◽  
Driving Mechanism ◽  
Admittance Spectroscopy ◽  
Near Surface ◽  
Type Layer ◽  
P Type ◽  
Different Levels ◽  
Higher Sensitivity

Recombination-induced passivation (RIP) experiments were conducted on p-type SiC after plasma treatment in deuterium. Higher sensitivity of SIMS to deuterium allowed us to confirm that recombination-induced athermal migration of hydrogen is indeed a driving mechanism for the RIP phenomenon. Hydrogen (or deuterium) athermally migrates from the plasma-induced hydrogen- or deuterium-reach near-surface layer down to more than a micron in depth, which under certain conditions creates a sufficiently thick layer of the n-type conductivity in the originally ptype epilayer. Thermal admittance spectroscopy was applied to investigate the defect levels in the top portion of the bandgap of the RIP-induced n-type layer. A few different levels located close to the conduction band of the originally p-type material were investigated.

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