A p-Type PbS Quantum Dot Ink with Improved Stability for Solution Processable Optoelectronics

2021 ◽  
Author(s):  
Fiaz Ahmed ◽  
John Hardin Dunlap ◽  
Perry J. Pellechia ◽  
Andrew Greytak
Keyword(s):  
Quantum Dot ◽  
Ligand Exchange ◽  
Chemical Characterization ◽  
Single Step ◽  
Improved Stability ◽  
Solution Processable ◽  
P Type ◽  
Pbs Quantum Dot

A highly stable p-type PbS-QDs ink is prepared using a single-step biphasic ligand exchange route, overcoming instability encountered in previous reports. Chemical characterization of the ink reveals 3-mercaptopriopionic acid (MPA)...

scholarly journals Single solvent based p-type and n-type PbS quantum dot inks for solution processable optoelectronics

2021 ◽  
Author(s):  
Fiaz Ahmed ◽  
John Dunlap ◽  
Perry Pellechia ◽  
Andrew Greytak
Keyword(s):  
Quantum Dot ◽  
Solution Processable ◽  
P Type ◽  
Pbs Quantum Dot

Characterization of Colloidal Quantum Dot Ligand Exchange by X-ray Photoelectron Spectroscopy

2013 ◽  
Vol 42 (5) ◽  
pp. 809-814 ◽  
Author(s):  
Ayomide Atewologun ◽  
Wangyao Ge ◽  
Adrienne D. Stiff-Roberts
Keyword(s):  
Quantum Dot ◽  
Photoelectron Spectroscopy ◽  
Ligand Exchange ◽  
X Ray ◽  
Colloidal Quantum Dot

Solution phase surface functionalization of PbS nanoparticles with organic ligands for single-step deposition of p-type layer of quantum dot solar cells

2018 ◽  
Vol 459 ◽  
pp. 562-571 ◽  
Author(s):  
Hossein Beygi ◽  
Seyed Abdolkarim Sajjadi ◽  
Abolfazl Babakhani ◽  
Jeff F. Young ◽  
Frank C.J.M. van Veggel
Keyword(s):  
Quantum Dot ◽  
Surface Functionalization ◽  
Single Step ◽  
Organic Ligands ◽  
Solution Phase ◽  
Pbs Nanoparticles ◽  
Quantum Dot Solar Cells ◽  
Type Layer ◽  
Phase Surface ◽  
P Type

scholarly journals Novel post-synthesis purification strategies and the ligand exchange processes in simplifying the fabrication of PbS quantum dot solar cells

RSC Advances ◽  
2020 ◽  
Vol 10 (51) ◽  
pp. 30707-30715
Author(s):  
Anju Elsa Tom ◽  
Ajith Thomas ◽  
V. V. Ison
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Ligand Exchange ◽  
Quantum Dot Solar Cells ◽  
Exchange Processes ◽  
Post Synthesis ◽  
Pbs Quantum Dot

Quantum dots (QDs) solids with iodide passivation are a key component for most of the well-performing PbS QDs solar cells.

scholarly journals Solid‐State Ligand‐Exchange Fabrication of CH 3 NH 3 PbI 3 Capped PbS Quantum Dot Solar Cells

2016 ◽  
Vol 3 (6) ◽  
pp. 1500432 ◽  
Author(s):  
Jiajun Peng ◽  
Yani Chen ◽  
Xianfeng Zhang ◽  
Angang Dong ◽  
Ziqi Liang
Keyword(s):  
Solar Cells ◽  
Solid State ◽  
Quantum Dot ◽  
Ligand Exchange ◽  
Quantum Dot Solar Cells ◽  
Pbs Quantum Dot

Properties of a-Si:H and a-SiGe:H Films Deposited by Photo-Assisted CVD

1986 ◽  
Vol 70 ◽  
Author(s):  
R. E. Rocheleau ◽  
S. C. Jackson. ◽  
S. S. Hegedus ◽  
B. N. Baron
Keyword(s):  
High Efficiency ◽  
Chemical Vapor ◽  
Photovoltaic Cell ◽  
Gas Flows ◽  
Long Term Stability ◽  
Improved Stability ◽  
Deposition Processes ◽  
P Type

ABSTRACTChemical vapor deposition techniques, in particular plasma enhanced CVD, have been used to produce high quality a-Si:H materials. Continuing research is directed toward increased device performance, improved stability, and translation of scale to commercial production. A part of this effort is the evaluation of alternate CVD techniques which in addition to providing technical options for high efficiency and long term stability are likely to lead to improved understanding of the relationships between deposition processes and material properties. A relatively new technique for depositing a-Si:H is photo-CVD which utilizes ultraviolet light to initiate the decomposition of silane or disilane. The best results from both materials properties and device efficiency points of view have been achieved using mercury sensitized photo-CVD. Recently, a 10.5% efficient a-Si:H p-i-n photovoltaic cell, fabricated by photo-CVD, was reported [1]. A limitation in photo-CVD has been preventing deposition on the UV transparent window. In this paper we describe a new photo-CVD reactor with a moveable UV-transparent Teflon film and secondary gas flows to eliminate window fouling. The deposition and opto-electronic characterization of intrinsic a-Si:H and a-SiGe:H and p-type a-SiC:H are described. Finally, preliminary results of p-i-n solar cells are presented.

scholarly journals Versatile PbS Quantum Dot Ligand Exchange Systems in the Presence of Pb-Thiolates

Small ◽  
2016 ◽  
Vol 13 (5) ◽  
pp. 1602956 ◽  
Author(s):  
Aabhash Shestha ◽  
Yanting Yin ◽  
Gunther G. Andersson ◽  
Nigel A. Spooner ◽  
Shizhang Qiao ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Ligand Exchange ◽  
Pbs Quantum Dot

scholarly journals Annealing-Temperature Dependent Carrier-Transportation in ZnO/PbS Quantum Dot Solar Cells Fabricated Using Liquid-Phase Ligand Exchange Methods

Energies ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 5037
Author(s):  
Akihiro Takahashi ◽  
Haibin Wang ◽  
Takeshi Fukuda ◽  
Norihiko Kamata ◽  
Takaya Kubo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Liquid Phase ◽  
Quantum Dot ◽  
Active Layer ◽  
Ligand Exchange ◽  
Carrier Transport ◽  
Annealing Temperature ◽  
Defect States ◽  
Heterojunction Solar Cells ◽  
Pbs Quantum Dot

We constructed ZnO/PbS quantum dot (QD) heterojunction solar cells using liquid-phase ligand exchange methods. Colloidal QD solutions deposited on ZnO-dense layers were treated at different temperatures to systematically study how thermal annealing temperature affected carrier transport properties. The surface of the layers became dense and smooth as the temperature approached approximately 80 °C. The morphology of layers became rough for higher temperatures, causing large grain-forming PbS QD aggregation. The number of defect states in the layers indicated a valley-shaped profile with a minimum of 80 °C. This temperature dependence was closely related to the amount of residual n-butylamine complexes in the PbS QD layers and the active layer morphology. The resulting carrier diffusion length obtained on the active layers treated at 80 °C reached approximately 430 nm. The solar cells with a 430-nm-thick active layer produced a power conversion efficiency (PCE) of 11.3%. An even higher PCE is expected in solar cells fabricated under optimal annealing conditions.

Oxygen Plasma-Induced p-Type Doping Improves Performance and Stability of PbS Quantum Dot Solar Cells

2019 ◽  
Vol 11 (29) ◽  
pp. 26047-26052 ◽  
Author(s):  
Hadi Tavakoli Dastjerdi ◽  
Rouhollah Tavakoli ◽  
Pankaj Yadav ◽  
Daniel Prochowicz ◽  
Michael Saliba ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Oxygen Plasma ◽  
Quantum Dot Solar Cells ◽  
P Type ◽  
Pbs Quantum Dot

Deposition and Characterization of In-Situ Boron Doped Polycrystalline Silicon Films for Microelectromechanical Systems Applications

1999 ◽  
Vol 605 ◽  
Author(s):  
J. J. McMahon ◽  
J. J. McMahon ◽  
J. M. Melzak ◽  
C. A. Zorman ◽  
J. Chung ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Microelectromechanical Systems ◽  
Single Step ◽  
Boron Doped ◽  
Polysilicon Films ◽  
Polycrystalline Silicon Films ◽  
P Type ◽  
Deposition Conditions

AbstractIn an effort to develop thick, p-type polycrystalline silicon (polysilicon) films for microelectromechanical systems (MEMS) applications, in-situ boron-doped polysilicon films were deposited by a single-step APCVD process at susceptor temperatures ranging from 700°C to 955°C. The process produces boron-doped films at a deposition rate of 73 nm/min at 955°C. Spreading resistance measurements show that the boron doping level is constant at 2 × 1019 /cm3 throughout the thickness of the films. Doped films deposited at the low temperatures exhibit compressive stress as high as 666 Mpa; however films deposited at 955°C exhibited stress as low as 130 MPa. TEM and XRD show that the microstructure strongly depends on the deposition conditions. Surface micromachined, singly clamped cantilevers and strain gauges were successfully fabricated and used to characterize the residual stress of 5.0 µm-thick doped films deposited at a susceptor temperature of 955°C.

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