scholarly journals Silicon sensors implemented on p-type substrates for high radiation resistance application

2007 ◽  
Vol 582 (3) ◽  
pp. 835-838 ◽  
Author(s):  
Marina Artuso
Keyword(s):  
Radiation Resistance ◽  
High Radiation ◽  
Silicon Sensors ◽  
P Type

Abiotic Degradation of Oil Asphaltens

2021 ◽  
Vol 627 (5) ◽  
pp. 53-56
Author(s):  
K. V. Shabalin ◽  
◽  
L. E. Foss ◽  
L. I. Musin ◽  
O. A. Nagornova ◽  
...  
Keyword(s):  
Radiation Resistance ◽  
Electron Beams ◽  
Reaction Products ◽  
High Radiation ◽  
Natural Conditions ◽  
Abiotic Degradation ◽  
Hydrophilic Lipophilic Balance ◽  
Intense Electron Beams ◽  
Biotic Degradation ◽  
Intense Electron

This review is devoted to the generalization and systematization of the available literature data on the processes of abiotic degradation of asphaltenes, which can occur in natural conditions. In particular, it was shown that exposure to sunlight, and especially UV radiation, triggers photolysis and photooxidation reactions in asphaltenes, leading to an increase in the oxygen content in them, thereby shifting the hydrophilic-lipophilic balance towards hydrophilicity. At the same time the availability of reaction products for subsequent biotic degradation by microorganisms is increased. Exposure to ionizing radiation does not lead to a significant change in the molecular composition of asphaltenes, due to their high radiation resistance. As exception there is the irradiation of asphaltenes with intense electron beams, which leads to their significant degradation.

Development and study of dielectric coatings with a high radiation resistance

2005 ◽  
Vol 35 (7) ◽  
pp. 663-666 ◽  
Author(s):  
Gennadi I Babayants ◽  
Sergey G Garanin ◽  
V G Zhupanov ◽  
Evgeni V Klyuev ◽  
Anton V Savkin ◽  
...  
Keyword(s):  
Radiation Resistance ◽  
High Radiation ◽  
Dielectric Coatings

Development of n-on-p silicon sensors for very high radiation environments

2011 ◽  
Vol 636 (1) ◽  
pp. S24-S30 ◽  
Author(s):  
Y. Unno ◽  
A.A. Affolder ◽  
P.P. Allport ◽  
R. Bates ◽  
C. Betancourt ◽  
...  
Keyword(s):  
High Radiation ◽  
Silicon Sensors ◽  
Very High

Fabrication and high radiation-resistant properties of functionalized carbon nanotube reinforced novolac epoxy resin nanocomposite coatings

RSC Advances ◽  
2016 ◽  
Vol 6 (63) ◽  
pp. 58296-58301 ◽  
Author(s):  
Shuquan Chang ◽  
Jin Li ◽  
Wei Han ◽  
Zheng Zhang ◽  
Ling Chang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Epoxy Resin ◽  
Radiation Resistance ◽  
Nanocomposite Coatings ◽  
High Radiation ◽  
Epoxy Nanocomposite ◽  
Radiation Resistant ◽  
Functionalized Carbon Nanotube ◽  
Novolac Epoxy

Functionalized MWCNT/novolac epoxy nanocomposite coatings with high radiation resistance were successfully fabricated and studied.

scholarly journals TCAD Modeling of Surface Radiation Damage Effects: A State-Of-The-Art Review

2021 ◽  
Vol 9 ◽  
Author(s):  
Arianna Morozzi ◽  
Francesco Moscatelli ◽  
Tommaso Croci ◽  
Daniele Passeri
Keyword(s):  
State Of The Art ◽  
Surface Damage ◽  
Surface Radiation ◽  
Particle Detectors ◽  
Mos Capacitors ◽  
X Ray ◽  
Silicon Sensors ◽  
Before And After ◽  
Technology Cad ◽  
P Type

A comprehensive numerical model which accounts for surface damage effects induced by radiation on silicon particle detectors is presented with reference to the state-of-the-art Synopsys Sentaurus Technology CAD (TCAD) tool. The overall aim of this work is to present the “Perugia 2019 Surface” damage modeling scheme, fully implemented within the TCAD environment, which effectively describes the surface damage effects induced by radiation in silicon sensors relying on a limited number of parameters relevant for physics. To this end, extensive measurement campaigns have been recently performed on gated-diodes and MOS capacitors at Fondazione Bruno Kessler (FBK) in Italy, Hamamatsu Photonics (HPK) in Japan and Infineon Technologies (IFX) in Austria on both n-type and p-type substrates (with and without p-spray isolation implants), in order to extrapolate the relevant parameters which rule the surface damage effects. The integrated interface trap density and the oxide charge density, have been determined before and after X-ray irradiation with doses ranging from 0.05 to 100 Mrad(SiO2), for each specific foundry and technology flavor. The main guidelines of this study are the versatility and generality of the simulation approach.

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