scholarly journals TCAD Modeling of Surface Radiation Damage Effects: A State-Of-The-Art Review

2021 ◽  
Vol 9 ◽  
Author(s):  
Arianna Morozzi ◽  
Francesco Moscatelli ◽  
Tommaso Croci ◽  
Daniele Passeri
Keyword(s):  
State Of The Art ◽  
Surface Damage ◽  
Surface Radiation ◽  
Particle Detectors ◽  
Mos Capacitors ◽  
X Ray ◽  
Silicon Sensors ◽  
Before And After ◽  
Technology Cad ◽  
P Type

A comprehensive numerical model which accounts for surface damage effects induced by radiation on silicon particle detectors is presented with reference to the state-of-the-art Synopsys Sentaurus Technology CAD (TCAD) tool. The overall aim of this work is to present the “Perugia 2019 Surface” damage modeling scheme, fully implemented within the TCAD environment, which effectively describes the surface damage effects induced by radiation in silicon sensors relying on a limited number of parameters relevant for physics. To this end, extensive measurement campaigns have been recently performed on gated-diodes and MOS capacitors at Fondazione Bruno Kessler (FBK) in Italy, Hamamatsu Photonics (HPK) in Japan and Infineon Technologies (IFX) in Austria on both n-type and p-type substrates (with and without p-spray isolation implants), in order to extrapolate the relevant parameters which rule the surface damage effects. The integrated interface trap density and the oxide charge density, have been determined before and after X-ray irradiation with doses ranging from 0.05 to 100 Mrad(SiO2), for each specific foundry and technology flavor. The main guidelines of this study are the versatility and generality of the simulation approach.

Aqueous Dissolution of Perovskite (CaTiO3): Effects of Surface Damage and [Ca2+] in the Leachant

2005 ◽  
Vol 20 (9) ◽  
pp. 2462-2473 ◽  
Author(s):  
Zhaoming Zhang ◽  
Mark G. Blackford ◽  
Gregory R. Lumpkin ◽  
Katherine L. Smith ◽  
Eric R. Vance
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Mechanical Damage ◽  
Surface Damage ◽  
Dissolution Behavior ◽  
Dissolution Testing ◽  
Cross Sectional ◽  
Intrinsic Dissolution ◽  
X Ray ◽  
Before And After

We have characterized thermally annealed perovskite (CaTiO3) surfaces, both before and after aqueous dissolution testing, using scanning electron microscopy, cross-sectional transmission electron microscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. It was shown that mechanical damage caused by polishing was essentially removed at the CaTiO3 surface by subsequent annealing; such annealed samples were used to study the intrinsic dissolution behavior of perovskite in deionized water at RT, 90 °C, and 150 °C. Our results indicate that, although mechanical damage caused higher Ca release initially, it did not affect the long-term Ca dissolution rate. However, the removal of surface damage by annealing did lead to the subsequent spatial ordering of the alteration product, which was identified as anatase (TiO2) by both x-ray and electron diffraction, on CaTiO3 surfaces after dissolution testing at150 °C. The effect of Ca2+ in the leachant on the dissolution reaction of perovskite at 150 °C was also investigated, and the results suggest that under repository conditions, the release of Ca from perovskite is likely to be significantly slower if Ca2+ is present in ground water.

Capacitance-Voltage Characteristics of p-Si/SiGeC Mos Capacitors

1995 ◽  
Vol 379 ◽  
Author(s):  
Kern Rim ◽  
S. Takagi ◽  
J. J. Welser ◽  
J. L. Hoyt ◽  
J. F. Gibbons
Keyword(s):  
Valence Band ◽  
High Frequency ◽  
Lattice Mismatch ◽  
X Ray Diffraction ◽  
Valence Band Offset ◽  
Mos Capacitors ◽  
X Ray ◽  
Capacitance Voltage ◽  
P Type ◽  
Reaction Processing

ABSTRACTThe first measurements of Si/SiGeC valence band offsets have been performed using heterostructure p-type MOS capacitors. Single crystalline epitaxial layers of SiGeC and Si were grown by the rapid thermal CVD technique, limited reaction processing, using ethylene as the carbon source. Films with carbon contents of up to ∼1.2% were studied. X-ray diffraction analysis shows the strain compensating effect of carbon in SiGeC. Substitutionality of carbon in SiGe was also confirmed by Fourier transform infrared spectroscopy measurements. MOS capacitors were fabricated by thermal oxidation (750°C) of the epitaxial Si cap on top of the SiGeC layer. Quasi-static and high frequency capacitance-voltage measurements show wellbehaved characteristics for the samples with carbon contents up to approximately 1%. Onedimensional Poisson simulations of the C-V curves were used to extract the valence band offset between Si and SiGeC. For a fixed germanium fraction, the offset decreases with increasing carbon content. However, for a given lattice mismatch, the offset for Si/Si1−x−yGexCy is larger than the measured value for Si/Si1−zGez.

Evaluation of Freezing Methods by Low Temperature X-Ray Diffraction

1977 ◽  
Vol 35 ◽  
pp. 330-333
Author(s):  
T. Gulik-Krzywicki ◽  
M.J. Costello
Keyword(s):  
Biological Materials ◽  
Molecular Organization ◽  
X Ray Diffraction ◽  
Glass Capillary ◽  
X Ray ◽  
Rate Dependent ◽  
Before And After ◽  
Freeze Etching ◽  
Diffraction Patterns ◽  
Set Up

Freeze-etching electron microscopy is currently one of the best methods for studying molecular organization of biological materials. Its application, however, is still limited by our imprecise knowledge about the perturbations of the original organization which may occur during quenching and fracturing of the samples and during the replication of fractured surfaces. Although it is well known that the preservation of the molecular organization of biological materials is critically dependent on the rate of freezing of the samples, little information is presently available concerning the nature and the extent of freezing-rate dependent perturbations of the original organizations. In order to obtain this information, we have developed a method based on the comparison of x-ray diffraction patterns of samples before and after freezing, prior to fracturing and replication.Our experimental set-up is shown in Fig. 1. The sample to be quenched is placed on its holder which is then mounted on a small metal holder (O) fixed on a glass capillary (p), whose position is controlled by a micromanipulator.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

Effect of MWCNT doping on the structural and optical properties of PVC/PVDF polymer blend

2017 ◽  
Vol 13 (2) ◽  
pp. 4640-4647
Author(s):  
A. M. Abdelghany ◽  
M.S. Meikhail ◽  
S.I. Badr ◽  
A. S. Momen
Keyword(s):  
Surface Damage ◽  
X Ray Diffraction ◽  
Dopant Content ◽  
Casting Technique ◽  
Transmission Electron ◽  
Dopant Level ◽  
Before And After ◽  
Carbon Nano Tubes ◽  
Small Band ◽  
Vibrational Bands

Thin film samples of pristine polyvinyl chloride (PVC), poly vinyldine fluoride (PVDF) in combination with their blend in addition to samples containing factorial mass fraction of multi wall carbon nano-tubes (MWCNTs) in the dopant level were prepared via routine casting technique using tetrahydrofurane (THF) as a common solvent. X-ray diffraction and transmission electron microscopy (TEM) depict the nano-scale (15-25 nm) of functionalized MWCNTs with no surface damage results from functionalization process.X-ray diffraction (XRD) shows a semi-crystalline nature of PVDF with evidence for more than one phase namely a and b phases. The fraction of b phase was calculated and correlated to the dopant content. FTIR optical absorption spectra revels a preservation of the main vibrational bands before and after addition of MWCNTs in the doping level with a presence of new small band 1151 cm-1 assigned for the interaction and complexation between constituents.

Revisiting the High-Pressure Properties of the Metal-Organic Frameworks ZIF-8 and ZIF-67

2020 ◽  
Author(s):  
Pia Vervoorts ◽  
Stefan Burger ◽  
Karina Hemmer ◽  
Gregor Kieslich
Keyword(s):  
High Pressure ◽  
State Of The Art ◽  
Energy Landscape ◽  
Structural Flexibility ◽  
Zeolitic Imidazolate Frameworks ◽  
Stimuli Responsive ◽  
X Ray Diffraction ◽  
X Ray ◽  
Open Questions ◽  
Metal Organic

The zeolitic imidazolate frameworks ZIF-8 and ZIF-67 harbour a series of fascinating stimuli responsive properties. Looking at their responsitivity to hydrostatic pressure as stimulus, open questions exist regarding the isotropic compression with non-penetrating pressure transmitting media. By applying a state-of-the-art high-pressure powder X-ray diffraction setup, we revisit the high-pressure behaviour of ZIF-8 and ZIF-67 up to <i>p</i> = 0.4 GPa in small pressure increments. We observe a drastic, reversible change of high-pressure powder X-ray diffraction data at <i>p</i> = 0.3 GPa, discovering large volume structural flexibility in ZIF-8 and ZIF-67. Our results imply a shallow underlying energy landscape in ZIF-8 and ZIF-67, an observation that might point at rich polymorphism of ZIF-8 and ZIF-67, similar to ZIF-4(Zn).<br>

Revisiting the High-Pressure Properties of the Metal-Organic Frameworks ZIF-8 and ZIF-67

2020 ◽  
Author(s):  
Pia Vervoorts ◽  
Stefan Burger ◽  
Karina Hemmer ◽  
Gregor Kieslich
Keyword(s):  
High Pressure ◽  
State Of The Art ◽  
Energy Landscape ◽  
Structural Flexibility ◽  
Zeolitic Imidazolate Frameworks ◽  
Stimuli Responsive ◽  
X Ray Diffraction ◽  
X Ray ◽  
Open Questions ◽  
Metal Organic

The zeolitic imidazolate frameworks ZIF-8 and ZIF-67 harbour a series of fascinating stimuli responsive properties. Looking at their responsitivity to hydrostatic pressure as stimulus, open questions exist regarding the isotropic compression with non-penetrating pressure transmitting media. By applying a state-of-the-art high-pressure powder X-ray diffraction setup, we revisit the high-pressure behaviour of ZIF-8 and ZIF-67 up to <i>p</i> = 0.4 GPa in small pressure increments. We observe a drastic, reversible change of high-pressure powder X-ray diffraction data at <i>p</i> = 0.3 GPa, discovering large volume structural flexibility in ZIF-8 and ZIF-67. Our results imply a shallow underlying energy landscape in ZIF-8 and ZIF-67, an observation that might point at rich polymorphism of ZIF-8 and ZIF-67, similar to ZIF-4(Zn).<br>

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Infra-Red Reflectance Microscopy (IRRM) for Daisy Chain Flip Chip Device Failure Analysis

2004 ◽  
Author(s):  
Carlo Grilletto ◽  
Steve Hsiung ◽  
Andrew Komrowski ◽  
John Soopikian ◽  
Daniel J.D. Sullivan ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
State Of The Art ◽  
Failure Mechanisms ◽  
Simple Metal ◽  
X Ray ◽  
Infra Red ◽  
Cause Of Failure ◽  
Reflectance Microscopy ◽  
Ir Emission

Abstract This paper describes a method to "non-destructively" inspect the bump side of an assembled flip-chip test die. The method is used in conjunction with a simple metal-connecting "modified daisy chain" die and makes use of the fact that polished silicon is transparent to infra-red (IR) light. The paper describes the technique, scope of detection and examples of failure mechanisms successfully identified. It includes an example of a shorting anomaly that was not detectable with the state of the art X-ray equipment, but was detected by an IR emission microscope. The anomalies, in many cases, have shown to be the cause of failure. Once this has been accomplished, then a reasonable deprocessing plan can be instituted to proceed with the failure analysis.

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