Energy loss and straggling of heavy ions in silicon nitride in the low MeV energy range

2007 ◽  
Vol 256 (2) ◽  
pp. 586-590 ◽  
Author(s):  
G. Sun ◽  
M. Döbeli ◽  
A.M. Müller ◽  
M. Stocker ◽  
M. Suter ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Energy Loss ◽  
Energy Range ◽  
Heavy Ions

Bandgap Engineering of Silicon Quantum Dot Nanostructures for High Efficient Silicon Solar Cell: The Tandem Approach

2008 ◽  
Vol 1121 ◽  
Author(s):  
B. Rezgui ◽  
A. Sibai ◽  
T. Nychyporuk ◽  
O. Marty ◽  
M. Lemiti ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Nitride ◽  
Quantum Dot ◽  
Energy Range ◽  
Silicon Nanocrystals ◽  
Light Transmittance ◽  
Silicon Nitride Film ◽  
Third Generation ◽  
Solar Cell Application ◽  
High Efficient

AbstractA tandem approach is proposed using Silicon nanostructures to increase the efficiency of so-called third generation photovoltaic solar cells.Si quantum dot nanostructures (or silicon nanocrystals)are synthesized by depositing silicon-rich nitride (SRN) layers using plasma-enhanced chemical vapour deposition (PECVD). We have shown the intrinsic formation of silicon nanocrystals (nc-Si) in non-stoechiometric amorphous hydrogenated silicon nitride (a-SiNx:H) layers using pure silane (SiH4) and ammonia (NH3) as reactants. The NH3 would provide more hydrogen in the silicon nitride film leading to an improvement of the crystallinity of Si quantum dots (QD) by favouring the disorder-to-order transition. Furthermore, hydrogen dissociated from the NH3 would passivate the surface of a Si QD more effectively.Transmission Electron Microscopy (TEM) was employed to explore the microstructure of the as-deposited Si-in-SiNx composite films. The chemical bonds of these films were examined by using Fourier Transform Infrared (FTIR) spectroscopy in the wavenumber range from 400 to 4000 cm-1 with a resolution of 4 cm-1. The photoluminescence (PL) property of silicon nanocrystals in silicon-rich nitride (SRN) layers are also investigated. The peak position of PL could be controlled by adjusting the flow rates of ammonia and silane . Two types of luminescent mechanisms, such as radiative defects in the film and the quantum confinement effect (QCE) in silicon nanocrystals, have been proposed to explain the origin of light emission from these structures. These two mechanisms are inherently coexisting in our samples and the photoluminescence spectrum depends on the contribution of each other. The optical absorption properties of the deposited films are obtained and analyzed from light transmittance measurements. Spectroscopique ellipsometry have been performed in order to analyse the refractive index and the extension coefficient. All these measurements were carried out at room temperature. These techniques have given good correlation in the extraction of the absorption coefficient induced by the Si nanocrystal in the visible /UV energy range. Measurements of photocurrent have shown a great increase of the induced currrent in the visible/UV energy range for an optimum of deposition conditions. These results will be discussed in order to reach a better knowledge of the physical properties of this third generation photovoltaic all silicon included material for the tandem solar cell application approach.

Energy loss of heavy ions in a dense hydrogen plasma

1990 ◽  
Vol 16 (4) ◽  
pp. 229-230 ◽  
Author(s):  
K-G Dietrich ◽  
D. H. H. Hoffmann ◽  
H. Wahl ◽  
C. R. Haas ◽  
H. Kunze ◽  
...  
Keyword(s):  
Energy Loss ◽  
Heavy Ions ◽  
Hydrogen Plasma

scholarly journals A Hard X-ray Observation of CYG X-1 in 1985

1987 ◽  
Vol 125 ◽  
pp. 202-202
Author(s):  
Y.Q. Ma ◽  
G.H. Li ◽  
C.M. Zhang ◽  
Q.Y. Xiao ◽  
Y.M. Qian ◽  
...  
Keyword(s):  
Energy Loss ◽  
Energy Range ◽  
Arrival Time ◽  
X Ray ◽  
Main Detector ◽  
Time And Energy

On September 22, 1985, a hard X-ray observation of Cyg X-1 was performed by using a balloon-borne CsI-NaI phoswich telescope HAPI-2 at Xianghe Balloon Facility in China. The main detector is CsI(T1) with a thickness of 0.4cm and an area of 140cm2. The energy range is 20–200KeV. The telescope reached a float altitude of about 38Km(4g/cm2). The photon's arrival time and energy loss spectrum were measured for both background and active tracking on-source observations.

A New Method to Determine the Energy Loss of Heavy Ions in Solids

1975 ◽  
pp. 77-83
Author(s):  
Horst Schmidt-Böcking ◽  
Gerd Rühle ◽  
Klaus Bethge
Keyword(s):  
Energy Loss ◽  
Heavy Ions ◽  
New Method

scholarly journals Энерговыделение при бомбардировке атомами дейтерия поверхности вольфрама

2019 ◽  
Vol 45 (11) ◽  
pp. 51
Author(s):  
Д.С. Мелузова ◽  
П.Ю. Бабенко ◽  
М.И. Миронов ◽  
В.С. Михайлов ◽  
А.П. Шергин ◽  
...  
Keyword(s):  
Energy Loss ◽  
Energy Range ◽  
Energy Release ◽  
Maximum Energy ◽  
Wide Energy Range ◽  
Tokamak Reactor ◽  
Tungsten Target ◽  
Wide Energy ◽  
Bragg Maximum ◽  
Maximum Energy Release

The distribution of energy release (linear energy loss) over depth was calculated when bombarded with deuterium atoms of a tungsten target in a wide energy range of incident particles of 100 eV - 10 MeV. It is shown that in the energy range up to 100 keV, the maximum energy release, contrary to the prevailing ideas, is near the surface of a solid. At energies above 100 keV, the nature of the distribution changes and the Bragg maximum appears near the point where the particle stops. The distribution of the energy release over depth in tungsten is obtained for conditions typical of the ITER tokamak reactor, which makes it possible to estimate the wall heating during bombardment by plasma atoms.

Color-center creation inLiFunder irradiation with swift heavy ions: Dependence on energy loss and fluence

2004 ◽  
Vol 70 (18) ◽  
Author(s):  
K. Schwartz ◽  
C. Trautmann ◽  
A. S. El-Said ◽  
R. Neumann ◽  
M. Toulemonde ◽  
...  
Keyword(s):  
Energy Loss ◽  
Color Center ◽  
Heavy Ions ◽  
Swift Heavy Ions
Sign in / Sign up

Export Citation Format

Share Document