Formation of spectral characteristics of channeling radiation from 800 to 2000MeV electrons and positrons in a thin silicon crystal

2008 ◽  
Vol 266 (17) ◽  
pp. 3852-3857 ◽  
Author(s):  
O.V. Bogdanov ◽  
Yu. L. Pivovarov
Keyword(s):  
Silicon Crystal ◽  
Spectral Characteristics ◽  
Electrons And Positrons ◽  
Thin Silicon ◽  
Channeling Radiation

New module for channeling radiation simulation in Geant4

2021 ◽  
Vol 16 (12) ◽  
pp. P12042
Author(s):  
A.A. Savchenko ◽  
W. Wagner
Keyword(s):  
Experimental Data ◽  
Single Crystals ◽  
Dipole Approximation ◽  
Relativistic Electrons ◽  
Planar Channeling ◽  
Classical Approach ◽  
Electrons And Positrons ◽  
Simulation Results ◽  
Channeling Radiation ◽  
Good Agreement

Abstract We present a new C++ module for simulation of channeling radiation to be implemented in Geant4 as a discrete physical process. The module allows simulation of channeling radiation from relativistic electrons and positrons with energies above 100 MeV for various types of single crystals. In this paper, we simulate planar channeling radiation applying the classical approach in the dipole approximation as a first attempt not yet considering other contributory processes. Simulation results are proved to be in a rather good agreement with experimental data.

Characteristics and Applications of Channeling Radiation from Relativistic Electrons and Positrons

1981 ◽  
Vol 28 (2) ◽  
pp. 1152-1155 ◽  
Author(s):  
R. H. Pantell ◽  
R. L. Swent ◽  
S. Datz ◽  
M. J. Alguard ◽  
B. L. Berman ◽  
...  
Keyword(s):  
Relativistic Electrons ◽  
Electrons And Positrons ◽  
Channeling Radiation

Monochromatization of Collimated Coherent Bremsstrahlung from a Thin Silicon Crystal

1971 ◽  
Vol 30 (3) ◽  
pp. 806-810 ◽  
Author(s):  
Tetsuji Nishikawa ◽  
Shiro Suzuki ◽  
Tsuneaki Tsuru ◽  
Kuninori Endo ◽  
Takeshi Katayama ◽  
...  
Keyword(s):  
Silicon Crystal ◽  
Coherent Bremsstrahlung ◽  
Thin Silicon
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