Internal electron emission in metal–insulator–metal thin film tunnel devices bombarded with keV argon and gold-cluster projectiles

2011 ◽  
Vol 269 (9) ◽  
pp. 972-976 ◽  
Author(s):  
Mario Marpe ◽  
Christian Heuser ◽  
Detlef Diesing ◽  
Andreas Wucher
Keyword(s):  
Thin Film ◽  
Electron Emission ◽  
Gold Cluster ◽  
Metal Insulator ◽  
Metal Thin Film ◽  
Metal Insulator Metal ◽  
Internal Electron

Switching effects in metal-insulator-metal thin film devices

1970 ◽  
Vol 6 (4) ◽  
pp. R39-R42 ◽  
Author(s):  
R.R. Sutherland ◽  
K.O. Legg ◽  
R.A. Collins
Keyword(s):  
Thin Film ◽  
Metal Insulator ◽  
Metal Thin Film ◽  
Metal Insulator Metal ◽  
Thin Film Devices

Comparison of ion beam and electron beam induced transport of hot charge carriers in metal-insulator-metal junctions

2011 ◽  
Vol 1354 ◽  
Author(s):  
Johannes Hopster ◽  
Detlef Diesing ◽  
Andreas Wucher ◽  
Marika Schleberger
Keyword(s):  
Electron Emission ◽  
Ion Beam ◽  
Charge Carriers ◽  
Applied Bias Voltage ◽  
Metal Insulator ◽  
Dissipation Process ◽  
Metal Insulator Metal ◽  
Internal Electron ◽  
Excitation Processes ◽  
Charged Ions

ABSTRACTThe generation of hot charge carriers within a solid bombarded by charged particles is investigated using biased thin film metal-insulator-metal (MIM) devices. For slow, highly charged ions approaching a metal surface the main dissipation process is electronic excitation of the substrate, leading to electron emission into the vacuum and internal electron emission across the MIM junction. In order to gain a deeper understanding of the distribution and transport of the excited charge carriers leading to the measured device current, we compare ion induced and electron induced excitation processes in terms of absolute internal emission yields as well as their dependence on the applied bias voltage.

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