Creation of Si nanocrystals from SiO2/Si by He and H ion implantation

2012 ◽  
Vol 276 ◽  
pp. 25-29 ◽  
Author(s):  
X.D. Zhang ◽  
C.L. Liu ◽  
M.K. Li ◽  
Y.J. Gao ◽  
D.C. Zhang
Keyword(s):  
Ion Implantation ◽  
Si Nanocrystals

Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing

2001 ◽  
Vol 45 (8) ◽  
pp. 1487-1494 ◽  
Author(s):  
Tsutomu Shimizu-Iwayama ◽  
Takayuki Hama ◽  
David E Hole ◽  
Ian W Boyd
Keyword(s):  
Ion Implantation ◽  
Photoluminescence Properties ◽  
Si Nanocrystals

Ultra-Low Energy Ion Implantation of Si into HfO2 and HfSiO-based Structures for Non Volatile Memory Applications

2010 ◽  
Vol 1250 ◽  
Author(s):  
Florence Gloux ◽  
Pierre-Eugène Coulon ◽  
Jesse Groenen ◽  
Sylvie Schamm ◽  
Gerard Benassayag ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thin Layers ◽  
Low Energy ◽  
Electrical Measurements ◽  
Thermal Budget ◽  
Si Nanocrystals ◽  
Non Volatile Memory ◽  
Memory Applications ◽  
Anomalous Oxidation ◽  
Post Implantation

AbstractThe fabrication of Si nanocrystals (NCs) in multilayer structures based on HfO2 and alloys for memory applications is carried out using an innovative method, the ultra-low energy (1 keV) ion implantation followed by a post-implantation annealing. Si+ ions are implanted into SiO2 thin layers deposited on top of thin HfO2-based layers. After annealing at high temperature (1050°C), the implantation leads to the formation of a two dimensional array of Si NCs at a distance from the surface larger than expected, due to an anomalous oxidation of the implanted Si. Nevertheless, the best memory windows are obtained at lower thermal budget, when no nanocrystals are present in the layer. This suggests that electrical measurements should always be correlated to structural characterization in order to understand where charge storage occurs.

Optimized photoluminescence of Si nanocrystals produced by ion implantation

2006 ◽  
Author(s):  
C. R. Mokry ◽  
P. J. Simpson ◽  
A. P. Knights
Keyword(s):  
Ion Implantation ◽  
Si Nanocrystals

Erbium-doped optical waveguide materials based on Si nanocrystals formed by metal vapour vacuum arc ion implantation

2002 ◽  
Vol 14 (44) ◽  
pp. 11315-11320 ◽  
Author(s):  
Zhisong Xiao ◽  
Fei Xu ◽  
Tonghe Zhang ◽  
Guoan Cheng ◽  
Lanlan Gu
Keyword(s):  
Ion Implantation ◽  
Optical Waveguide ◽  
Vacuum Arc ◽  
Metal Vapour ◽  
Si Nanocrystals ◽  
Erbium Doped
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