Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing

2001 ◽  
Vol 45 (8) ◽  
pp. 1487-1494 ◽  
Author(s):  
Tsutomu Shimizu-Iwayama ◽  
Takayuki Hama ◽  
David E Hole ◽  
Ian W Boyd
Keyword(s):  
Ion Implantation ◽  
Photoluminescence Properties ◽  
Si Nanocrystals

Ultra-Low Energy Ion Implantation of Si into HfO2 and HfSiO-based Structures for Non Volatile Memory Applications

2010 ◽  
Vol 1250 ◽  
Author(s):  
Florence Gloux ◽  
Pierre-Eugène Coulon ◽  
Jesse Groenen ◽  
Sylvie Schamm ◽  
Gerard Benassayag ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thin Layers ◽  
Low Energy ◽  
Electrical Measurements ◽  
Thermal Budget ◽  
Si Nanocrystals ◽  
Non Volatile Memory ◽  
Memory Applications ◽  
Anomalous Oxidation ◽  
Post Implantation

AbstractThe fabrication of Si nanocrystals (NCs) in multilayer structures based on HfO2 and alloys for memory applications is carried out using an innovative method, the ultra-low energy (1 keV) ion implantation followed by a post-implantation annealing. Si+ ions are implanted into SiO2 thin layers deposited on top of thin HfO2-based layers. After annealing at high temperature (1050°C), the implantation leads to the formation of a two dimensional array of Si NCs at a distance from the surface larger than expected, due to an anomalous oxidation of the implanted Si. Nevertheless, the best memory windows are obtained at lower thermal budget, when no nanocrystals are present in the layer. This suggests that electrical measurements should always be correlated to structural characterization in order to understand where charge storage occurs.

Effect of atmospheric oxidation on the electronic and photoluminescence properties of silicon nanocrystal

2000 ◽  
Vol 72 (1-2) ◽  
pp. 245-255 ◽  
Author(s):  
I. N. Germanenko ◽  
M. Dongol ◽  
Y. B. Pithawalla ◽  
M. Samy El-Shall ◽  
J. A. Carlisle
Keyword(s):  
Quantum Confinement ◽  
Blue Shift ◽  
Laser Vaporization ◽  
Photoluminescence Properties ◽  
Bonding Structure ◽  
Quantum Size ◽  
Si Nanocrystals ◽  
Crystalline Core ◽  
Si Nanoparticles ◽  
Significant Blue Shift

Web-like aggregates of coalesced Si nanocrystals produced by a laser vaporization-controlled condensation technique show luminescence properties that are similar to those of porous Si. The results are consistent with a quantum confinement mechanism as the source of the red photoluminescence (PL) in this system. The oxidized Si nanoparticles do not exhibit the red PL that is characteristic of the surface-oxidized Si nanocrystals. The nanoparticles are allowed to oxidize slowly, and the PL is measured as a function of the exposure time in air. A significant blue shift in the red PL peak is observed as a result of the slow oxidation process. The dependence of quantum size effects on the bonding structure is established by correlating the PL data with the photon-yield electronic structure measurements made at the Advanced Light Source. The results indicate that as the nanoparticles oxidize, the radius of the crystalline core decreases in size, which gives rise to a larger bandgap and consequently to the observed blue-shift in the PL band. The correlation between the PL, SXF, and NEXAFS results provides further support for the quantum confinement mechanism as the origin of the visible PL in Si nanocrystals.

Optimized photoluminescence of Si nanocrystals produced by ion implantation

2006 ◽  
Author(s):  
C. R. Mokry ◽  
P. J. Simpson ◽  
A. P. Knights
Keyword(s):  
Ion Implantation ◽  
Si Nanocrystals

scholarly journals Control of photoluminescence properties of Si nanocrystals by simultaneously doping n- and p-type impurities

2004 ◽  
Vol 85 (7) ◽  
pp. 1158-1160 ◽  
Author(s):  
Minoru Fujii ◽  
Yasuhiro Yamaguchi ◽  
Yuji Takase ◽  
Keiichi Ninomiya ◽  
Shinji Hayashi
Keyword(s):  
Photoluminescence Properties ◽  
Si Nanocrystals ◽  
P Type
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