The effect of crystal orientation on the behavior of a polycrystalline tungsten surface under focused Ga+ ion bombardment

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2012.08.008 ◽

2012 ◽

Vol 289 ◽

pp. 39-42 ◽

Author(s):

Guang Ran ◽

Shenghua Wu ◽

Xiang Liu ◽

Jihong Wu ◽

Ning Li ◽

...

Keyword(s):

Crystal Orientation ◽

Ion Bombardment ◽

Polycrystalline Tungsten ◽

Tungsten Surface

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Quantitative examination of electron beam induced carbon deposition at a polycrystalline tungsten surface, studied by Auger electron spectroscopy

Surface Science ◽

10.1016/0039-6028(77)90389-2 ◽

1977 ◽

Vol 67 (1) ◽

pp. 351-357 ◽

Author(s):

Richard W. Joyner ◽

John Rickman

Keyword(s):

Electron Beam ◽

Auger Electron Spectroscopy ◽

Electron Spectroscopy ◽

Auger Electron ◽

Carbon Deposition ◽

Polycrystalline Tungsten ◽

Tungsten Surface ◽

Quantitative Examination

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Inert gas ion bombardment induced work function changes in polycrystalline tungsten and gold ribbon

Vacuum ◽

10.1016/0042-207x(68)91186-x ◽

1968 ◽

Vol 18 (4) ◽

pp. 205-211 ◽

Author(s):

RPW Lawson ◽

G Carter

Keyword(s):

Work Function ◽

Ion Bombardment ◽

Inert Gas ◽

Polycrystalline Tungsten

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Chemisorption of NO on polycrystalline tungsten surface

Surface Science Letters ◽

10.1016/0167-2584(84)90614-5 ◽

1984 ◽

Vol 141 (2-3) ◽

pp. A203

Author(s):

Hirofumi Miki ◽

Hiroki Inomażta ◽

Kazutoshi Kato ◽

Toshihide Kioka ◽

Koji Kawasaki

Keyword(s):

Polycrystalline Tungsten ◽

Tungsten Surface

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Evaluating crystal-orientation-dependent properties on polycrystalline tungsten: Example oxidation

International Journal of Refractory Metals and Hard Materials ◽

10.1016/j.ijrmhm.2020.105189 ◽

2020 ◽

Vol 88 ◽

pp. 105189 ◽

Author(s):

Karsten Schlueter ◽

Martin Balden ◽

Tiago Fiorini da Silva

Keyword(s):

Crystal Orientation ◽

Polycrystalline Tungsten

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The trapping of potassium atoms by a polycrystalline tungsten surface as a function of energy and angle of incidence

Surface Science ◽

10.1016/0039-6028(76)90095-9 ◽

1976 ◽

Vol 54 (1) ◽

pp. 154-168 ◽

Author(s):

A. Hurkmans ◽

E.G. Overbosch ◽

D.R. Olander ◽

J. Los

Keyword(s):

Angle Of Incidence ◽

Polycrystalline Tungsten ◽

Tungsten Surface

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Chemisorption of no on polycrystalline tungsten surface

Surface Science ◽

10.1016/0039-6028(84)90143-2 ◽

1984 ◽

Vol 141 (2-3) ◽

pp. 473-486 ◽

Author(s):

Hirofumi Miki ◽

Hiroki Inomata ◽

Kazutoshi Kato ◽

Toshihide Kioka ◽

Koji Kawasaki

Keyword(s):

Polycrystalline Tungsten ◽

Tungsten Surface

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Dynamic Behavior of Carbon Deposited on Tungsten Surface due to Carbon Ion Bombardment and Its Influence on Ion–Solid Interactions

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.5259 ◽

2003 ◽

Vol 42 (Part 1, No. 8) ◽

pp. 5259-5266 ◽

Author(s):

Retsuo Kawakami ◽

Kaoru Ohya

Keyword(s):

Dynamic Behavior ◽

Ion Bombardment ◽

Tungsten Surface

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Zinc oxide nanolevel surface transformation for liquid crystal orientation by ion bombardment

Journal of Applied Physics ◽

10.1063/1.3080159 ◽

2009 ◽

Vol 105 (5) ◽

pp. 054506 ◽

Author(s):

Byeong-Yun Oh ◽

Won-Kyu Lee ◽

Young-Hwan Kim ◽

Dae-Shik Seo

Keyword(s):

Liquid Crystal ◽

Crystal Orientation ◽

Ion Bombardment ◽

Surface Transformation ◽

Liquid Crystal Orientation

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Inert gas ion bombardment induced work function changes in polycrystalline tungsten and gold ribbon

Vacuum ◽

10.1016/0042-207x(68)90675-1 ◽

1968 ◽

Vol 18 (7) ◽

pp. 423

Keyword(s):

Work Function ◽

Ion Bombardment ◽

Inert Gas ◽

Polycrystalline Tungsten

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Layer-by-Layer Sputtering and Ultrathin Ion Implantation by Low-Energy Grazing Ion Bombardment

MRS Proceedings ◽

10.1557/proc-0908-oo14-08 ◽

2005 ◽

Vol 908 ◽

Author(s):

Abdurauf Dzhurakhalov ◽

Sirojiddin Rahmatov ◽

Nigorakhon Teshabaeva ◽

Maqsud Yusupov

Keyword(s):

Ion Implantation ◽

Crystal Orientation ◽

Ion Bombardment ◽

Grazing Incidence ◽

Layer By Layer ◽

Ion Sputtering ◽

Depth Distributions

AbstractThe ion sputtering and implantation into GaAs(001) surface at 1-5 keV Se+ grazing ion bombardment have been investigated by computer simulation.The azimuth angular dependencies of sputtering and penetration yield at grazing incidence have been calculated. It was observed that these dependencies correlate the crystal orientation. The depth distributions of 1-5 keV Se ions implanted into GaAs(001) for several azimuth angles of incidence have been presented.

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