Layer-by-Layer Sputtering and Ultrathin Ion Implantation by Low-Energy Grazing Ion Bombardment

2005 ◽  
Vol 908 ◽  
Author(s):  
Abdurauf Dzhurakhalov ◽  
Sirojiddin Rahmatov ◽  
Nigorakhon Teshabaeva ◽  
Maqsud Yusupov
Keyword(s):  
Ion Implantation ◽  
Crystal Orientation ◽  
Ion Bombardment ◽  
Grazing Incidence ◽  
Low Energy ◽  
Layer By Layer ◽  
Ion Sputtering ◽  
Depth Distributions

AbstractThe ion sputtering and implantation into GaAs(001) surface at 1-5 keV Se+ grazing ion bombardment have been investigated by computer simulation.The azimuth angular dependencies of sputtering and penetration yield at grazing incidence have been calculated. It was observed that these dependencies correlate the crystal orientation. The depth distributions of 1-5 keV Se ions implanted into GaAs(001) for several azimuth angles of incidence have been presented.

A mathematical model for deep ion implantation depth profiling by synchrotron radiation grazing-incidence X-ray fluorescence spectrometry

2020 ◽  
Vol 35 (12) ◽  
pp. 2964-2973
Author(s):  
Mateusz Czyzycki ◽  
Mike Kokkoris ◽  
Andreas-Germanos Karydas
Keyword(s):  
Mathematical Model ◽  
Synchrotron Radiation ◽  
Ion Implantation ◽  
Standing Wave ◽  
Depth Profiling ◽  
Grazing Incidence ◽  
Shallow Depth ◽  
X Ray ◽  
Implantation Depth ◽  
Depth Distributions

Grazing-incidence X-ray fluorescence is applied to obtain shallow depth distributions using the X-ray standing wave (XSW). A new XSW-free mathematical model is proposed that allows the quantitative derivation of much deeper depth distributions.

Structure of Al-N Films Deposited by a Quantitative Dual Ion Beam Process

1983 ◽  
Vol 27 ◽  
Author(s):  
H.T.G. Hentzell ◽  
J.M.E. Harper ◽  
J.J. Cuomo
Keyword(s):  
Ion Beam ◽  
Film Surface ◽  
Ion Bombardment ◽  
Preferred Orientation ◽  
Low Energy ◽  
Ion Sputtering ◽  
Pronounced Change ◽  
Beam System ◽  
Axis Parallel ◽  
N Flux

ABSTRACTWe describe the structure of Al-N films deposited with N/Al ratios varying from 0 to 1. A dual ion beam system supplies the Al flux by inert ion sputtering, and the N flux by low energy (100–500 eV) N2+ ion bombardment of the growing film. For N/Al < 1, a cermet structure forms with large Al grains mixed with AlN. Above the composition N/Al = 1, excess N is rejected from the AlN. The AlN films show a pronounced change in preferred orientation from c-axis perpendicular to the film surface, to c-axis parallel to the film surface with increasing N2+ energy

Hopping Barriers at Step Edges

1993 ◽  
Vol 312 ◽  
Author(s):  
Pavel Šmilauer ◽  
Mark R. Wilby ◽  
Dimitri D. Vvedensky
Keyword(s):  
High Energy ◽  
Layer Growth ◽  
Low Energy ◽  
Step Edge ◽  
Solid Model ◽  
Layer By Layer ◽  
Ion Sputtering ◽  
High Energy Electron ◽  
Diffraction Intensity ◽  
Good Agreement

AbstractThe recent discovery of reentrant layer-by-layer growth in metal homoepitaxy has stimulated considerable interest in the role played by barriers to hopping down descending steps. However, the existence of step-edge barriers for semiconductors is far from being clearly established. We have investigated the effects of step-edge barriers for epitaxial growth and the “inverse” process of low-energy ion sputtering on metal surfaces using Monte Carlo simulations of a solid-on-solid model. Our results are in good agreement with available experimental data and provide new insights into the microscopic origins of the evolution of surface morphology during these processes. Our simulations also suggest that such step-edge barriers can explain the observed temperature and time dependence of the reflection high-energy electron diffraction intensity during post-growth recovery on GaAs(001), which sheds new light on this controversial subject.

Preliminary Results of Low Energy Sputter Yields of Boron Nitride due to Xenon Ion Bombardment (Preprint)

2008 ◽  
Author(s):  
James L. Topper ◽  
Binyamin Rubin ◽  
Cody C. Farnell ◽  
Azer P. Yalin
Keyword(s):  
Boron Nitride ◽  
Ion Bombardment ◽  
Low Energy ◽  
Preliminary Results

Special Aspects of High-Intensity Low-Energy Ion Implantation

2021 ◽  
Author(s):  
A. I. Ryabchikov ◽  
A. I. Ivanova ◽  
O. S. Korneva ◽  
D. O. Sivin
Keyword(s):  
Ion Implantation ◽  
High Intensity ◽  
Low Energy
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