Room temperature diamond-like carbon coatings produced by low energy ion implantation

2014 ◽  
Vol 331 ◽  
pp. 144-148 ◽  
Author(s):  
A. Markwitz ◽  
B. Mohr ◽  
J. Leveneur
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Low Energy ◽  
Diamond Like Carbon ◽  
Carbon Coatings

Differences of Damage Production in GaAs and InP after MeV and Low Energy Ion Implantation

1993 ◽  
Vol 300 ◽  
Author(s):  
E. Wendler ◽  
T. Bachmann ◽  
W. Wesch
Keyword(s):  
Ion Implantation ◽  
Energy Loss ◽  
Nuclear Energy ◽  
Room Temperature ◽  
Energy Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Critical Value ◽  
Low Energy ◽  
Optical Measurements ◽  
Defect Annealing

ABSTRACTIon implantation induced damage production in GaAs and InP is investigated using Rutherford backscattering spectrometry in combination with channeling techniques and near-edge optical measurements. 200 keV and 1.6 MeV Ar+ ions are implanted at room temperature in GaAs and InP with ion doses varying between 2 × 1012 cm−2 and 3 × 1015 cm−2. Our results show that InP behaves similar for the two implantation energies and no influence of energy loss in electronic processes is found. In GaAs in the region of maximum nuclear energy deposition almost no difference in the damage production occurs for the two implantation energies. But for 1.6 MeV Ar+ implantation within the first 500 nm the defect concentration is very low in comparison to the nuclear energy deposition, which may be the consequence of ionizationinduced defect annealing and/or of the fact that in this depth region the amount of nuclear energy deposition is less than a critical value being necessary for the production of heavily damaged and amorphous zones.

Formation of graphitic and diamond-like carbon by low energy carbon ion implantation on c plane sapphire substrate

2018 ◽  
Vol 649 ◽  
pp. 12-16 ◽  
Author(s):  
S. Pradeep ◽  
S. Surender ◽  
K. Prabakaran ◽  
M. Jayasakthi ◽  
Shubra Singh ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Sapphire Substrate ◽  
Low Energy ◽  
Diamond Like Carbon ◽  
Carbon Ion

SUPPRESSION OF SILICON NANOSTRUCTURE GROWTH BY MEDIUM ENERGY NITROGEN ION IMPLANTATION

2004 ◽  
Vol 03 (04n05) ◽  
pp. 431-437
Author(s):  
V. J. KENNEDY ◽  
S. JOHNSON ◽  
A. MARKWITZ ◽  
M. RUDOLPHI ◽  
H. BAUMANN ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Growth Control ◽  
Low Energy ◽  
Medium Energy ◽  
Nitrogen Ion Implantation ◽  
Silicon Nanostructure ◽  
Nitrogen Ion ◽  
Simple Technology ◽  
20 Nm

A novel nanofabrication technology to produce dense arrays of silicon nanowhiskers up to 20 nm high has been developed. This rapid and simple technology employs electron beam rapid thermal annealing (EB-RTA) of untreated silicon. Pre-implantation of the silicon substrate with nitrogen at low energy (5 keV) has been shown to suppress the formation of these nanostructures. In this paper we demonstrate identical silicon nanostructure growth suppression when produced following nitrogen ion implantation at 50 keV and 100 keV. Specimens were implanted at room temperature and subsequently annealed at 1000°C for 15 s (temperature gradient 5° Cs -1). Specific results obtained from AFM and NRA analysis are discussed highlighting the possibility of silicon nanowhisker growth control using nitrogen ion implantation.

Room-temperature quantum effect in silicon nanoparticles obtained by low-energy ion implantation and embedded in a nanometer scale capacitor

2005 ◽  
Vol 86 (16) ◽  
pp. 163111 ◽  
Author(s):  
M. Shalchian ◽  
J. Grisolia ◽  
G. Ben Assayag ◽  
H. Coffin ◽  
S. M. Atarodi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Silicon Nanoparticles ◽  
Quantum Effect ◽  
Low Energy ◽  
Nanometer Scale

Special Aspects of High-Intensity Low-Energy Ion Implantation

2021 ◽  
Author(s):  
A. I. Ryabchikov ◽  
A. I. Ivanova ◽  
O. S. Korneva ◽  
D. O. Sivin
Keyword(s):  
Ion Implantation ◽  
High Intensity ◽  
Low Energy
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