Stripping of relativistic uranium-ion beams by foils

2020 ◽  
Vol 479 ◽  
pp. 23-34
Author(s):  
V.P. Shevelko ◽  
N. Winckler ◽  
Inga Yu. Tolstikhina
Keyword(s):  
Ion Beams ◽  
Uranium Ion

Development of the carbon foils as charge strippers for high-intensity uranium ion beams

2011 ◽  
Vol 655 (1) ◽  
pp. 57-60 ◽  
Author(s):  
Hiroo Hasebe ◽  
Hironori Kuboki ◽  
Hiroki Okuno ◽  
Nobuhisa Fukunishi ◽  
Osamu Kamigaito ◽  
...  
Keyword(s):  
High Intensity ◽  
Ion Beams ◽  
Uranium Ion ◽  
Carbon Foils

Multiple-electron losses in uranium ion beams in heavy ion synchrotrons

2016 ◽  
Vol 372 ◽  
pp. 102-108 ◽  
Author(s):  
L. Bozyk ◽  
F. Chill ◽  
M.S. Litsarev ◽  
I.Yu. Tolstikhina ◽  
V.P. Shevelko
Keyword(s):  
Heavy Ion ◽  
Ion Beams ◽  
Uranium Ion

scholarly journals Transport and acceleration of high current uranium ion beams

1985 ◽  
Author(s):  
I.G. Brown ◽  
J.E. Galvin ◽  
R. Keller ◽  
P. Spaedtke ◽  
R.W Mueller ◽  
...  
Keyword(s):  
Ion Beams ◽  
High Current ◽  
Uranium Ion

Development of long-life carbon stripper foils for uranium ion beams

2010 ◽  
Vol 613 (3) ◽  
pp. 453-456 ◽  
Author(s):  
Hiroo Hasebe ◽  
Hiroki Okuno ◽  
Hironori Kuboki ◽  
Hiromichi Ryuto ◽  
Nobuhisa Fukunishi ◽  
...  
Keyword(s):  
Ion Beams ◽  
Uranium Ion ◽  
Long Life ◽  
Carbon Stripper Foils

scholarly journals Transport and acceleration of high current uranium ion beams

1986 ◽  
Vol 245 (2-3) ◽  
pp. 217-222 ◽  
Author(s):  
I.G. Brown ◽  
J.E. Galvin ◽  
R. Keller ◽  
P. Spädtke ◽  
R.W. Müller ◽  
...  
Keyword(s):  
Ion Beams ◽  
High Current ◽  
Uranium Ion

Axial Observation of X-Ray Spectra from a Beam-Foil Source

1988 ◽  
Vol 102 ◽  
pp. 339-342
Author(s):  
J.M. Laming ◽  
J.D. Silver ◽  
R. Barnsley ◽  
J. Dunn ◽  
K.D. Evans ◽  
...  
Keyword(s):  
Spectral Resolution ◽  
Heavy Ion ◽  
Ion Beams ◽  
Beam Axis ◽  
Doppler Broadening ◽  
X Ray ◽  
Beam Foil

AbstractNew observations of x-ray spectra from foil-excited heavy ion beams are reported. By observing the target in a direction along the beam axis, an improvement in spectral resolution, δλ/λ, by about a factor of two is achieved, due to the reduced Doppler broadening in this geometry.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

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