System-on-chip integrated circuit technology applications on the DIII-D tokamak for multi-field measurements

Several mm-wave diagnostics on the DIII-D tokamak provide multi-scale and multi-dimensional measurements of plasma profile evolution and turbulence fluctuations. Mm-wave fusion plasma diagnostics that adopt system-on-chip integrated circuit technology can provide better space utilization, flexible installation, and improved sensitivity. In order to further extend this technology for additional fusion facilities with a higher toroidal magnetic field, V-band (55–75 GHz) and F-band (90–140 GHz) chips for Microwave Imaging Reflectometer (MIR) and Electron Cyclotron Emission Imaging (ECEI) instruments are developed and tested in the Davis Millimeter Wave Research Center (DMRC). Current measurement data show that correlation between these SoC-based diagnostic instruments with other state-of-the-art diagnostics enables co-located multi-field turbulence fluctuation measurement.

Influence of Applied Stress on the Ferroelectricity of Thin Zr-Doped HfO2 Films

HfO2-based ferroelectric materials have been widely studied for their application in ferroelectric FETs, which are compatible with conventional CMOS processes; however, problems with the material’s inherent fatigue properties have limited its potential for device application. This paper systematically investigates the effects of tensile stress and annealing temperature on the endurance and ferroelectric properties faced by Zr-doped HfO2 ferroelectric film. The remnant polarization (Pr) shows an increasing trend with annealing temperature, while the change in the coercive electric field (Ec) is not obvious in terms of the relationship with tensile stress or annealing temperature. In addition, the application of tensile stress does help to improve the endurance characteristics by about two orders of magnitude for the ferroelectric material, and the endurance properties show a tendency to be negatively correlated with annealing temperature. Overall, although the effect of stress on the ferroelectricity of a HZO material is not obvious, it has a great influence on its endurance properties and can optimize the endurance of the material, and ferroelectricity exhibits a higher dependence on temperature. The optimization of the endurance properties of HZO materials by stress can facilitate their development and application in future integrated circuit technology.

The Numerov process over a non-uniform grid

The Numerov process is a solution method applicable to some classes of differential equations, that provides an error term of the fifth order in the grid size with a computational cost comparable to that of the finite-difference scheme. In the original formulation of the method, a uniform grid size is required; the paper shows a procedure for extending its applicability to a non-uniform grid in one dimension. The effectiveness of the procedure is tested on a model problem, and comparisons with other methods are carried out. Finally, it is shown how to extend the applicability of the method to a larger class of equations; among these, the mathematical model of semiconductor devices is important in view of its applications to the integrated-circuit technology.

A New Automated Preparation Process by Electrochemical Corrosion of STM Tungsten Tips

Scanning tunneling microscope (STM) is one of the most important instruments in the field of two-dimensional(2D) materials science while the STM tip is one of the most important parts in STM. Thus, we exhibit a new automated preparation process by electrochemical corrosion of STM tungsten(W) tips based on analog circuit technology in this paper. And the new preparation process is easy and reliable and can save time of researchers. Here, we will elaborate the preparation process and how the system works. In all, we will open up a new road in the field of preparation of STM tips.