Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser

We fabricated Si Nano-columns by a femtosecond laser with various wavelengths and process parameters, whilst the specimen was submerged in water. The experiments were carried out by three types of wavelengths i.e. 1030 nm, 515nm, 343nm, with 500 fs laser pulses. The scales of these spikes are much smaller than micro spikes that are constructed by laser irradiation of silicon surface in vacuum or gases like SF6, Cl2. The Si nano-columns of 300 nm or less in width were characterized by SEM measurements. The formation of these Si Nano-columns that were revealed by SEM observation, indicates chemical etching with laser ablation occurred when surface exposed by laser beam. We observed 200 nm spikes height at the center of laser beam profile and the ones uniform in height at lateral incident area.

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Formation of aggregate color centers under the action of femtosecond laser pulses

Journal of Physics Conference Series ◽

10.1088/1742-6596/1115/5/052029 ◽

2018 ◽

Vol 1115 ◽

pp. 052029

Author(s):

V P Dresvyanskiy ◽

A V Kuznetsov ◽

S Enkhbat ◽

E F Martynovich

Keyword(s):

Femtosecond Laser ◽

Laser Pulses ◽

Femtosecond Laser Pulses ◽

Color Centers

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Fabrication of Detonation Nanodiamonds Containing Silicon‐Vacancy Color Centers by High Temperature Annealing

physica status solidi (a) ◽

10.1002/pssa.202170054 ◽

2021 ◽

Vol 218 (19) ◽

pp. 2170054

Author(s):

Konosuke Shimazaki ◽

Hiroki Kawaguchi ◽

Hideaki Takashima ◽

Takuya Fabian Segawa ◽

Frederick T.-K. So ◽

...

Keyword(s):

High Temperature ◽

Detonation Nanodiamonds ◽

Color Centers ◽

High Temperature Annealing ◽

Silicon Vacancy

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Investigation of silicon-vacancy centers formation during the CVD diamond growth of thin and delta doped layers

Journal of Materials Chemistry C ◽

10.1039/d1tc01538a ◽

2021 ◽

Author(s):

Mikhail Lobaev ◽

Alexey Gorbachev ◽

Dmitry Radishev ◽

Anatoly Vikharev ◽

Sergey Bogdanov ◽

...

Keyword(s):

Cvd Diamond ◽

Diamond Growth ◽

Color Centers ◽

Silicon Vacancy ◽

Silicon Doped ◽

The Relationship

The results of a study of the deposition of silicon-doped epitaxial diamond layers in a microwave CVD reactor to create silicon-vacancy color centers are presented. The relationship between the optical...

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Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

Nanotechnology ◽

10.1088/1361-6528/ac40c1 ◽

2021 ◽

Author(s):

Yexin Fan ◽

ying song ◽

zongwei xu ◽

jintong wu ◽

rui zhu ◽

...

Keyword(s):

Silicon Carbide ◽

Ion Implantation ◽

Color Center ◽

Md Simulation ◽

Subsequent Annealing ◽

Atomic Scale ◽

New Method ◽

Color Centers ◽

Silicon Vacancy ◽

Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

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