A 2×2 optical switch based on plasma dispersion effect in silicon-on-insulator

Silicon-on-insulator (SOI) is becoming more attractive as a photonic material for photonic integrated circuits (PLC) because of its unique features. In this paper, we modeled and simulated the performance of the SOI phase modulator with various doping configuration based on the plasma dispersion effect. The effect of the free injected carrier in the region of the propagating optical mode have been investigated at the optical wavelength of 1.55µm. The proposed device have been integrated in the SOI rib waveguide with trapezoidal cross section structure and four different doping configurations have been chosen which are the n+p+n+, p+n+p+, n+n+p+and the p+p+n+. Our results show that the n+n+p+configuration possessed the best modulation efficiency of 0.026V.cm and gained the smallest absorption loss of 1.1dB at 0.95V applied voltage.

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A Planar Lightwave Circuit Based on Optical Add-Drop Multiplexer with 16 Tunable Wavelength Channels

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.216.661 ◽

2011 ◽

Vol 216 ◽

pp. 661-665 ◽

Cited By ~ 1

Author(s):

Xiao Bo Xing ◽

Ying Lian Wang

Keyword(s):

Single Mode ◽

Grating Period ◽

Silicon On Insulator ◽

Etch Depth ◽

Dispersion Effect ◽

Channel Spacing ◽

Bragg Wavelength ◽

Planar Lightwave Circuit ◽

Planar Lightwave ◽

Plasma Dispersion

An electrically controlled optical add-drop multiplexer (OADM) based on silicon on insulator is presented, which possesses 16 tunable add/drop wavelength channel of 100 GHz channel spacing. The OADM is integrated lateral p-i-n diodes with single-mode Mach-Zehnder interferometer filter, which transforms the change of refractive index induced by the plasma dispersion effect into a voltage controlled variation of add/drop wavelength. The 3dB bandwidth of add/drop wavelength is less than 0.8 nm when the etch depth, period, Bragg wavelength and length of Bragg grating are 500 nm, 223 nm, 1548.5 nm and 1000 mm, respectively. When the applied voltage is 1.059~1.2219V, the tunable add/drop wavelength of OADM is between 1547.7 and 1536.5nm. Also, the add/drop wavelength could be controlled precisely by changing the grating period, which can satisfy the requirement of other wavelength range.

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Evolution of optical modulation using majority carrier plasma dispersion effect in SOI

10.1117/12.765258 ◽

2008 ◽

Cited By ~ 1

Author(s):

F. Y. Gardes ◽

G. T. Reed ◽

A. P. Knights ◽

G. Mashanovich

Keyword(s):

Optical Modulation ◽

Dispersion Effect ◽

Majority Carrier ◽

Plasma Dispersion

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Analysis of Silicon-On-Insulator (SOI) Buried Waveguide Phase Modulator

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.462.532 ◽

2012 ◽

Vol 462 ◽

pp. 532-535

Author(s):

Abdul Razak Hanim ◽

Haroon Hazura ◽

Bidin Mardiana ◽

Shaari Sahbudin ◽

P. Susthitha Menon

Keyword(s):

Refractive Index ◽

Single Mode ◽

Free Carrier ◽

Silicon On Insulator ◽

Phase Modulator ◽

Carrier Injection ◽

Dispersion Effect ◽

Optical Phase ◽

Real Refractive Index ◽

Simulation Package

The analyses of the simulation of a single mode buried waveguide optical phase modulator based on SOI material are here reported. The structure has been simulated by Athena from Silvaco simulation package. The buried waveguide is created by doping phosphorus with concentration of 10e15 cm-3 into the substrate. The real refractive index and the absorption coefficient of the waveguide are changed using the free carrier dispersion effect via carrier injection of a pn junction. The efficiency, VπLπ is calculated and the performance is compared with that of the rib waveguide optical phase modulator of the same material and dimensions. Simulation shows that the device can be an efficient device for application in intensity modulation.

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