Analysis of Silicon-On-Insulator (SOI) Buried Waveguide Phase Modulator

2012 ◽  
Vol 462 ◽  
pp. 532-535
Author(s):  
Abdul Razak Hanim ◽  
Haroon Hazura ◽  
Bidin Mardiana ◽  
Shaari Sahbudin ◽  
P. Susthitha Menon
Keyword(s):  
Refractive Index ◽  
Single Mode ◽  
Free Carrier ◽  
Silicon On Insulator ◽  
Phase Modulator ◽  
Carrier Injection ◽  
Dispersion Effect ◽  
Optical Phase ◽  
Real Refractive Index ◽  
Simulation Package

The analyses of the simulation of a single mode buried waveguide optical phase modulator based on SOI material are here reported. The structure has been simulated by Athena from Silvaco simulation package. The buried waveguide is created by doping phosphorus with concentration of 10e15 cm-3 into the substrate. The real refractive index and the absorption coefficient of the waveguide are changed using the free carrier dispersion effect via carrier injection of a pn junction. The efficiency, VπLπ is calculated and the performance is compared with that of the rib waveguide optical phase modulator of the same material and dimensions. Simulation shows that the device can be an efficient device for application in intensity modulation.

Performance of the Active Microring Resonator Based on SOI Rib Waveguide

2012 ◽  
Vol 462 ◽  
pp. 375-379
Author(s):  
B. Mardiana ◽  
A.R. Hanim ◽  
H. Hazura ◽  
S. Shaari ◽  
P. Susthitha Menon ◽  
...  
Keyword(s):  
Refractive Index ◽  
Ring Resonator ◽  
Refractive Index Change ◽  
Electrical Signal ◽  
Free Carrier ◽  
Simulation Software ◽  
Microring Resonator ◽  
Silicon On Insulator ◽  
Carrier Injection ◽  
Rib Waveguide

Micro-ring resonator based on silicon-on-insulator (SOI) has been extensively studied due to its many advantages, thus promising to improve the optoelectronic integrated circuit performance. This paper highlights the study of the free carrier injection effect on the silicon rib waveguide with p-i-n diode structure integrated in the SOI micro-ring resonator. The free carrier concentrations have been modulated by the electrical signal that can cause change of refractive index of the micro-ring resonator. The device performances are predicted by using numerical modelling software 2D SILVACO and Finite Difference Time Domain method simulation software RSOFT. The results show the change of refractive index is maximized at a greater applied voltage. A shift in resonant wavelength of around 6.7 nm was predicted at 0.9V with 1.14x10-3refractive index change. It is also shown that 8.5dB change of the output response obtained through the output.

Analyses for various doping structures of SOI-based optical phase modulator using free carrier dispersion effect

Optik ◽  
2014 ◽  
Vol 125 (6) ◽  
pp. 1800-1803 ◽  
Author(s):  
B. Mardiana ◽  
Sahbudin Shaari ◽  
P. Susthitha Menon ◽  
H. Hazura ◽  
A.R. Hanim ◽  
...  
Keyword(s):  
Free Carrier ◽  
Phase Modulator ◽  
Dispersion Effect ◽  
Optical Phase

Free Carrier Absorption Loss of p-i-n Silicon-On-Insulator (SOI) Phase Modulator

2011 ◽  
Author(s):  
H. Hazura ◽  
A. R. Hanim ◽  
B. Mardiana ◽  
Sahbudin Shaari ◽  
P. S. Menon ◽  
...  
Keyword(s):  
Free Carrier ◽  
Silicon On Insulator ◽  
Phase Modulator ◽  
Free Carrier Absorption ◽  
Absorption Loss ◽  
Carrier Absorption

scholarly journals Silicon-on-insulator free-carrier injection modulators for the mid-infrared

2019 ◽  
Vol 44 (4) ◽  
pp. 915 ◽  
Author(s):  
M. Nedeljkovic ◽  
C. G. Littlejohns ◽  
A. Z. Khokhar ◽  
M. Banakar ◽  
W. Cao ◽  
...  
Keyword(s):  
Free Carrier ◽  
Silicon On Insulator ◽  
Carrier Injection ◽  
Mid Infrared

Optimizing the Modulation Efficiency of Silicon-on-Insulator-Based Optical Phase Modulator

2013 ◽  
Vol 19 (2) ◽  
pp. 543-546
Author(s):  
B. Mardiana ◽  
Sahbudin Shaari ◽  
P. S. Menon ◽  
H. Hazura ◽  
A. R. Hanim ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Phase Modulator ◽  
Optical Phase
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