Indication of the Coronavirus Model Using a Nanowire Biosensor

The presented results indicate virus-like particles of the coronavirus (CVP) using a nanowire (NW) biosensor based on silicon-on-insulator technology. In the experiment, we used suspensions of CVP and of specific antibodies to the virus. Measurements of the current value of the field-effect transistor before and after the introduction of the CVP on the surface of the nanowire were performed. Results showed antibody + CVP complexes on the phase section with the surface of the nanowire modulate the current of the field-effect transistor; CVP has an electrically positive charge on the phase section “nanowire surface-viral suspension»; antibody + CVP complexes have an electrically negative charge on the phase section “nanowire surface-viral suspension”; the sensitivity of the biosensor is made up of 10−18 M; the time display was 200–300 s.

ВЫСОКОТЕМПЕРАТУРНЫЙ ДЕЛЬТА-СИГМА-АЦП

Представлены результаты разработки специализированной интегральной схемы 12-разрядного дельта-сигма-АЦП с тактовой частотой 5 МГц и полосой рабочих частот 50 кГц при напряжении питания 3,3 В и рабочей температуре до 175 градусов Цельсия. Кристалл интегральной схемы изготовлен по программе «Европрактика» по технологии компании X-FAB XT018 «кремний на изоляторе» и используется в сенсорной сети для мониторинга состояния высокотемпературных объектов. The paper presents the development results of a specialized integrated circuit of a twelve-bit delta-sigma analog-to-digital converter with a clock frequency of 5 MHz and a working frequency band of 50 kHz with a supply voltage of 3.3 V and an operating temperature of up to 175 degrees Celsius. The integrated circuit die was manufactured within “Europractice” program using the X-FAB XT018 silicon-on-insulator technology and is used in the sensor network to monitor the state of high-temperature objects.

Compact and Low Crosstalk Echelle Grating Demultiplexer on Silicon-On-Insulator Technology

We report on the design of an ultra-compact integrated wavelength demultiplexer in echelle configuration for the optical O-band realized on silicon-on-insulator technology. The device has four channels with channel spacing of 800 GHz and a small footprint of 260 × 83 μm2. Channel crosstalk lower than −28 dB across the four channels is experimentally demonstrated along with insertion losses of −1.5 dB.