Asymmetric field photovoltaic effect of neutral atoms

Abstract As semiconductor technology keeps scaling down, failure analysis and device characterizations become more and more challenging. Global fault isolation without detailed circuit information comprises the majority of foundry EFA cases. Certain suspected areas can be isolated, but further narrow-down of transistor and device performance is very important with regards to process monitoring and failure analysis. A nanoprobing methodology is widely applied in advanced failure analysis, especially during device level electrical characterization. It is useful to verify device performance and to prove the problematic structure electrically. But sometimes the EFA spot coverage is too big to do nanoprobing analysis. Then further narrow-down is quite critical to identify the suspected structure before nanoprobing is employed. That means there is a gap between global fault isolation and localized device analysis. Under these kinds of situation, PVC and AFP current image are offen options to identify the suspected structure, but they still have their limitation for many soft defect or marginal fails. As in this case, PVC and AFP current image failed to identify the defect in the spot range. To overcome the shortage of PVC and AFP current image analysis, laser was innovatively applied in our current image analysis in this paper. As is known to all, proper wavelength laser can induce the photovoltaic effect in the device. The photovoltaic effect induced photo current can bring with it some information of the device. If this kind of information was properly interpreted, it can give us some clue of the device performance.

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Experiments with Trapped Neutral Atoms.

10.21236/ada306690 ◽

1996 ◽

Author(s):

David E. Pritchard ◽

Wolfgang Ketterle

Keyword(s):

Neutral Atoms

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An atomic absorption study of ground state neutral atoms and ions in the inductively coupled plasma

Spectrochimica Acta Part B Atomic Spectroscopy ◽

10.1016/0584-8547(86)80182-3 ◽

1986 ◽

Vol 41 (5) ◽

pp. 431-438 ◽

Cited By ~ 15

Author(s):

G. Gillson ◽

G. Horlick

Keyword(s):

Atomic Absorption ◽

Ground State ◽

Inductively Coupled Plasma ◽

Absorption Study ◽

Neutral Atoms ◽

Inductively Coupled

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α-decay half-lives for neutral atoms and bare nuclei

Physical Review C ◽

10.1103/physrevc.78.054317 ◽

2008 ◽

Vol 78 (5) ◽

Cited By ~ 19

Author(s):

Zygmunt Patyk ◽

Hans Geissel ◽

Yuri A. Litvinov ◽

Agatino Musumarra ◽

Chiara Nociforo

Keyword(s):

Neutral Atoms ◽

Α Decay

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Recent Progress in the Development of Graphene Detector for Terahertz Detection

Sensors ◽

10.3390/s21154987 ◽

2021 ◽

Vol 21 (15) ◽

pp. 4987

Author(s):

Jianlong Liu ◽

Xin Li ◽

Ruirui Jiang ◽

Kaiqiang Yang ◽

Jing Zhao ◽

...

Keyword(s):

Recent Progress ◽

Photovoltaic Effect ◽

Dimensional Structure ◽

High Electron ◽

Terahertz Waves ◽

Terahertz Detectors ◽

Basic Part ◽

Suitable Material ◽

Terahertz Region ◽

Frequency Independent

Terahertz waves are expected to be used in next-generation communications, detection, and other fields due to their unique characteristics. As a basic part of the terahertz application system, the terahertz detector plays a key role in terahertz technology. Due to the two-dimensional structure, graphene has unique characteristics features, such as exceptionally high electron mobility, zero band-gap, and frequency-independent spectral absorption, particularly in the terahertz region, making it a suitable material for terahertz detectors. In this review, the recent progress of graphene terahertz detectors related to photovoltaic effect (PV), photothermoelectric effect (PTE), bolometric effect, and plasma wave resonance are introduced and discussed.

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