scholarly journals Recent Progress in the Development of Graphene Detector for Terahertz Detection

Sensors ◽  
2021 ◽  
Vol 21 (15) ◽  
pp. 4987
Author(s):  
Jianlong Liu ◽  
Xin Li ◽  
Ruirui Jiang ◽  
Kaiqiang Yang ◽  
Jing Zhao ◽  
...  
Keyword(s):  
Recent Progress ◽  
Photovoltaic Effect ◽  
Dimensional Structure ◽  
High Electron ◽  
Terahertz Waves ◽  
Terahertz Detectors ◽  
Basic Part ◽  
Suitable Material ◽  
Terahertz Region ◽  
Frequency Independent

Terahertz waves are expected to be used in next-generation communications, detection, and other fields due to their unique characteristics. As a basic part of the terahertz application system, the terahertz detector plays a key role in terahertz technology. Due to the two-dimensional structure, graphene has unique characteristics features, such as exceptionally high electron mobility, zero band-gap, and frequency-independent spectral absorption, particularly in the terahertz region, making it a suitable material for terahertz detectors. In this review, the recent progress of graphene terahertz detectors related to photovoltaic effect (PV), photothermoelectric effect (PTE), bolometric effect, and plasma wave resonance are introduced and discussed.

Two-terminal terahertz detectors based on AlGaN/GaN high-electron-mobility transistors

2019 ◽  
Vol 115 (11) ◽  
pp. 111101 ◽  
Author(s):  
Jiandong Sun ◽  
Zhipeng Zhang ◽  
Xiang Li ◽  
Hua Qin ◽  
Yunfei Sun ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Terahertz Detectors ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

A Comparison of (100) Hg1−x Cdx Te and Hg1−x ZnxTe Grown By Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
R. D. Feldman ◽  
R. F. Austin ◽  
P. M. Bridenbaugh
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Near Infrared ◽  
Wave Length ◽  
High Electron ◽  
Mbe Growth ◽  
Suitable Material ◽  
Zn Content ◽  
Length Range ◽  
Very High

ABSTRACTFilms of HgCdTe with x < 0.6 and of HgZnTe with x < 0.26 have been grown by molecular beam epitaxy (MBE). Very high electron mobilities have been achieved for both materials in the small bandgap region. Hall mobilities at 77K reach 4.8 × 105 cm2 /V-s for Hg0 87 Zn0.13 Te, and 3.1 × 105 cm2/V-s for Hg0.87 Zn0.13 Te. HgCdTe growth was easily extended to the 1.5 – 3 μm wave length range. Attempts to extend HgZnTe to these bandgaps were unsuccessful due to defects that are induced by surface roughness in high Zn-content films. These results suggest that HgCdTe is the more suitable material for MBE growth for near infrared applications.

scholarly journals Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

2014 ◽  
Vol 115 (21) ◽  
pp. 214503 ◽  
Author(s):  
M. Białek ◽  
A. M. Witowski ◽  
M. Orlita ◽  
M. Potemski ◽  
M. Czapkiewicz ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron ◽  
Terahertz Detectors ◽  
High Electron Mobility

Plasmon dispersions in high electron mobility terahertz detectors

2014 ◽  
Vol 104 (26) ◽  
pp. 263514 ◽  
Author(s):  
M. Białek ◽  
M. Czapkiewicz ◽  
J. Wróbel ◽  
V. Umansky ◽  
J. Łusakowski
Keyword(s):  
Electron Mobility ◽  
High Electron ◽  
Terahertz Detectors ◽  
High Electron Mobility

scholarly journals A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 377 ◽  
Author(s):  
Fanming Zeng ◽  
Judy An ◽  
Guangnan Zhou ◽  
Wenmao Li ◽  
Hui Wang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Recent Progress ◽  
High Electron Mobility Transistors ◽  
Device Fabrication ◽  
High Electron ◽  
Simulation Studies ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Device Structures ◽  
High Frequency Devices

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

scholarly journals Recent progress in shape memory polymer composites: methods, properties, applications and prospects

2019 ◽  
Vol 8 (1) ◽  
pp. 327-351 ◽  
Author(s):  
Ming Lei ◽  
Zhen Chen ◽  
Haibao Lu ◽  
Kai Yu
Keyword(s):  
Shape Memory ◽  
Polymer Composites ◽  
Recent Progress ◽  
Shape Memory Polymer ◽  
Three Dimensional ◽  
Dimensional Structure ◽  
Advanced Manufacturing ◽  
Potential Applications ◽  
Systematic Understanding ◽  
Composite Properties

Abstract Shape memory polymers (SMPs) can be programmed to a temporary shape, and then recover its original shape by applying environmental stimuli when needed. To expands the application space of SMPs, the shape memory polymer composites (SMPCs) were fabricated either to improve the mechanical properties, or to incorporate more stimulus methods. With the deepening of research, the filler arrangement can also be used to reshape the composites from a two dimensional sheet to a three dimensional structure by a strain mismatch. Recently, SMPCs show more and more interesting behaviors. To gain systematic understanding, we briefly review the recent progress and summarize the challenges in SMPCs. We focus on the reinforcement methods and the composite properties. To look to the future, we review the bonding points with the advanced manufacturing technology and their potential applications.

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