scholarly journals Crystal growth and luminescence properties of Yb2Si2O7 infra-red emission scintillator

2016 ◽  
Vol 58 ◽  
pp. 14-17 ◽  
Author(s):  
Takahiko Horiai ◽  
Shunsuke Kurosawa ◽  
Rikito Murakami ◽  
Jan Pejchal ◽  
Akihiro Yamaji ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Luminescence Properties ◽  
Red Emission ◽  
Infra Red

scholarly journals Crystal Growth and Luminescence Properties of Yb-doped Gd3Al2Ga3O12 Infra-red Scintillator

2014 ◽  
Vol 36 (9) ◽  
pp. 1484-1487 ◽  
Author(s):  
Akira Suzuki ◽  
Shunsuke Kurosawa ◽  
Shinji Nagata ◽  
Tomoo Yamamura ◽  
Jan Pejchal ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Luminescence Properties ◽  
Infra Red

Crystal growth and luminescence properties of Ti-doped LiAlO2 for neutron scintillator

2011 ◽  
Vol 318 (1) ◽  
pp. 828-832 ◽  
Author(s):  
Jan Pejchal ◽  
Yutaka Fujimoto ◽  
Valery Chani ◽  
Federico Moretti ◽  
Takayuki Yanagida ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Luminescence Properties

Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg1−xCdxTe

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
S.G. Gasan-Zade ◽  
M.V. Strikha ◽  
G.A. Shepelskii
Keyword(s):  
Electric Field ◽  
Impact Ionization ◽  
Strong Electric Field ◽  
Radiative Transition ◽  
Hot Electrons ◽  
Acceptor Level ◽  
Threshold Values ◽  
Red Emission ◽  
V Band ◽  
Infra Red

AbstractThe intensive far infra-red irradiation in the range of 80–100 μm was observed in uniaxially strained gapless p-Hg1−xCdxTe (MCT) with x = 0.14 in the strong electric field. The inverse occupation in strained MCT is created because the hot electrons distribution occurs in the c-band under impact ionization, while the holes are localized near the v-band top. The probability of band-to-band radiative transition increases dramatically when the acceptor level becomes resonance in the v-band. At threshold values of strain and electric field (P = 2.5–2.7 kbar, E = 50–55 V/cm), increase in irradiation (by 3 orders of magnitude) and increase in current (by 4–6 times) occur.

Crystal growth, optical and luminescence properties of Pr-doped Y2SiO5 single crystals

2007 ◽  
Vol 29 (11) ◽  
pp. 1381-1384 ◽  
Author(s):  
A. Novoselov ◽  
H. Ogino ◽  
A. Yoshikawa ◽  
M. Nikl ◽  
J. Pejchal ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystals ◽  
Luminescence Properties

scholarly journals Far infra-red emission from NGC 7078: First detection of intra-cluster dust in a globular cluster

2003 ◽  
Vol 408 (1) ◽  
pp. L9-L12 ◽  
Author(s):  
A. Evans ◽  
M. Stickel ◽  
J. Th. van Loon ◽  
S. P. S. Eyres ◽  
M. E. L. Hopwood ◽  
...  
Keyword(s):  
Globular Cluster ◽  
Red Emission ◽  
Infra Red

Luminescence properties of Mn4+ with high 2Eg level energy in the polyfluoride Na3Li3Sc2F12

2020 ◽  
Vol 49 (33) ◽  
pp. 11613-11617
Author(s):  
Hong Li ◽  
Yan Liu ◽  
Shu Tang ◽  
Lijun Luo ◽  
Qiang Zhou ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Thermal Quenching ◽  
Luminescence Properties ◽  
Level Energy ◽  
Red Emission ◽  
White Leds ◽  
Red Emitting Phosphor

Red-emitting phosphor Na3Li3Sc2F12:Mn4+ with the high 2Eg level energy shows intensive red emission accompanied with the high external quantum efficiency and thermal-quenching resistance for warm white LEDs.

scholarly journals Single Crystal Growth and Crystal Structure Analysis of Novel Orange-Red Emission Pure Nitride CaAl2Si4N8:Eu2+ Phosphor

ACS Omega ◽  
2019 ◽  
Vol 4 (6) ◽  
pp. 9939-9945 ◽  
Author(s):  
Shota Hasegawa ◽  
Takuya Hasegawa ◽  
Sun Woog Kim ◽  
Ryota Yamanashi ◽  
Kazuyoshi Uematsu ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Crystal Growth ◽  
Single Crystal ◽  
Structure Analysis ◽  
Single Crystal Growth ◽  
Crystal Structure Analysis ◽  
Red Emission
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