A simulation study to improve the efficiency of ZnO1-xSx/Cu2ZnSn (Sy, Se1-y)4 solar cells by composition-ratio control

2018 ◽  
Vol 78 ◽  
pp. 259-265 ◽  
Author(s):  
S. Sharbati ◽  
E. Norouzzadeh ◽  
S. Mohammadi
2015 ◽  
Vol 84 ◽  
pp. 41-46 ◽  
Author(s):  
R. Lachaume ◽  
R. Cariou ◽  
J. Decobert ◽  
M. Foldyna ◽  
G. Hamon ◽  
...  

Optik ◽  
2016 ◽  
Vol 127 (20) ◽  
pp. 9464-9473 ◽  
Author(s):  
M. Fortes ◽  
A. Belfar ◽  
A.J. Garcia-Loureiro

2021 ◽  
Vol 34 (1) ◽  
pp. 01-08
Author(s):  
B GopalKrishna ◽  
Sanjay Tiwari

Perovskite solar cells are emerging photovoltaic devices with PCE of above 25%. Perovskite are suitable light absorber materials in solar cells with excellent properties like appropriate band gap energy, long carrier lifetime and diffusion length, and high extinction coefficient. Simulation study is an important technique to understand working mechanisms of perovskites solar cells. The study would help develop efficient, stable PSCs experimentally. In this study, modeling of perovskite solar cell was carried out through Setfos software. The optimization of different parameters of layer structure of solar cell would help to achieve maximum light absorption in the perovskite layer of solar cell. Simulation study is based drift-diffusion model to study the different parameters of perovskite solar cell. Hysteresis is one of the factors in the perovskite solar cell which may influence the device performance. The measurement of abnormal hysteresis can be done by current-voltage curve during backward scan during simulation study. In backward scan, the measurement starts from biasing voltage higher than open circuit voltage and sweep to voltage below zero. The numerical simulation used to study the various parameters like open circuit voltage, short circuit current, fill factor, power conversion efficiency and hysteresis. The simulation results would help to understand the photophysics of solar cell physics which would help to fabricate highly efficient and stable perovskite solar cells experimentally.


2013 ◽  
Vol 34 (4) ◽  
pp. 463-468 ◽  
Author(s):  
朱键卓 ZHU Jian-zhuo ◽  
杜会静 DU Hui-jing ◽  
苏子生 SU Zi-sheng ◽  
朱世敏 ZHU Shi-min ◽  
徐天赋 XU Tian-fu

2019 ◽  
Vol 21 (32) ◽  
pp. 17836-17845 ◽  
Author(s):  
Jin Xiang ◽  
Yana Li ◽  
Feng Huang ◽  
Dingyong Zhong

A J–V hysteresis loop with a large gap near the VOC (or JSC) region appears by interfacial recombination (or bulk recombination).


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