Improved performance uniformity of inkjet printed n-channel organic field-effect transistors and complementary inverters

2011 ◽  
Vol 12 (4) ◽  
pp. 634-640 ◽  
Author(s):  
Kang-Jun Baeg ◽  
Dongyoon Khim ◽  
Ju-Hwan Kim ◽  
Minji Kang ◽  
In-Kyu You ◽  
...  
2009 ◽  
Vol 94 (5) ◽  
pp. 053303 ◽  
Author(s):  
M. P. Walser ◽  
W. L. Kalb ◽  
T. Mathis ◽  
T. J. Brenner ◽  
B. Batlogg

RSC Advances ◽  
2017 ◽  
Vol 7 (2) ◽  
pp. 1110-1117 ◽  
Author(s):  
Grace Dansoa Tabi ◽  
Benjamin Nketia-Yawson ◽  
Ji Young Lee ◽  
Keun Cho ◽  
Bogyu Lim ◽  
...  

A series of three benzothiadiazole-indacenodithieno[3,2-b]thiophene (BT–IDTT) based ladder-type polymers containing the acceptor (P1) or donor moieties (P2 and P3) are reported for ambipolar OFETs and complementary inverters.


RSC Advances ◽  
2016 ◽  
Vol 6 (34) ◽  
pp. 28801-28808 ◽  
Author(s):  
Femi Igbari ◽  
Qi-Xun Shang ◽  
Yue-Min Xie ◽  
Xiu-Juan Zhang ◽  
Zhao-Kui Wang ◽  
...  

An approach to achieve improved performance in pentacene-based organic field effect transistors (OFETs) using high-k AlOx prepared by a low temperature sol–gel technique as a thin buffer layer on a SiO2 gate dielectric was demonstrated.


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