Improved Performance of Pentacene Organic Field-Effect Transistors by Inserting a V 2 O 5 Metal Oxide Layer

Chinese Physics Letters ◽

10.1088/0256-307x/28/12/127203 ◽

2011 ◽

Vol 28 (12) ◽

pp. 127203 ◽

Author(s):

Geng Zhao ◽

Xiao-Man Cheng ◽

Hai-Jun Tian ◽

Bo-Qun Du ◽

Xiao-Yu Liang

Keyword(s):

Metal Oxide ◽

Oxide Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Metal Oxide Layer ◽

Improved Performance

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Low-Voltage Organic Field-Effect Transistors (OFETs) with Solution-Processed Metal-Oxide as Gate Dielectric

ACS Applied Materials & Interfaces ◽

10.1021/am201078v ◽

2011 ◽

Vol 3 (12) ◽

pp. 4662-4667 ◽

Author(s):

Yaorong Su ◽

Chengliang Wang ◽

Weiguang Xie ◽

Fangyan Xie ◽

Jian Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Low Voltage ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Solution Processed

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Improved Performance of Solution-Processed n-Type Organic Field-Effect Transistors by Regulating the Intermolecular Interactions and Crystalline Domains on Macroscopic Scale

Chemistry of Materials ◽

10.1021/cm501780p ◽

2014 ◽

Vol 26 (13) ◽

pp. 4030-4037 ◽

Author(s):

Suresh Vasimalla ◽

Satyaprasad P. Senanayak ◽

Meenakshi Sharma ◽

K. S. Narayan ◽

Parameswar Krishnan Iyer

Keyword(s):

Intermolecular Interactions ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Macroscopic Scale ◽

Solution Processed ◽

Improved Performance ◽

Crystalline Domains

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Effects of Hot Carriers on DC and RF Performances of Deep Submicron p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Various Oxide Layer Thicknesses

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2633 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2633-2635 ◽

Author(s):

Mao-Chyuan Tang ◽

Yean-Kuen Fang ◽

Wen-Shiang Liao ◽

David C. Chen ◽

Chune-Sin Yeh ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carriers ◽

Rf Performances

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Polyelectrolytes: Improved Performance in n-Type Organic Field-Effect Transistors via Polyelectrolyte-Mediated Interfacial Doping (Adv. Electron. Mater. 10/2017)

Advanced Electronic Materials ◽

10.1002/aelm.201770043 ◽

2017 ◽

Vol 3 (10) ◽

Author(s):

Yu Jung Park ◽

Myoung Joo Cha ◽

Yung Jin Yoon ◽

Shinuk Cho ◽

Jin Young Kim ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Improved Performance

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Improved Performance of 4H-SiC Double Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors by Increasing RESURF Doses

Applied Physics Express ◽

10.1143/apex.1.101403 ◽

2008 ◽

Vol 1 ◽

pp. 101403 ◽

Author(s):

Masato Noborio ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Surface Field ◽

Improved Performance ◽

Reduced Surface

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Tuning the threshold voltage by inserting a thin molybdenum oxide layer into organic field-effect transistors

Applied Physics Letters ◽

10.1063/1.2822443 ◽

2007 ◽

Vol 91 (26) ◽

pp. 263502 ◽

Author(s):

Yunlong Guo ◽

Yunqi Liu ◽

Chong-an Di ◽

Gui Yu ◽

Weiping Wu ◽

...

Keyword(s):

Oxide Layer ◽

Molybdenum Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors

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Low-Temperature Molecular Vapor Deposition of Ultrathin Metal Oxide Dielectric for Low-Voltage Vertical Organic Field Effect Transistors

ACS Applied Materials & Interfaces ◽

10.1021/am3026773 ◽

2013 ◽

Vol 5 (7) ◽

pp. 2462-2468 ◽

Author(s):

Ariel J. Ben-Sasson ◽

Guy Ankonina ◽

Michael Greenman ◽

Michael T. Grimes ◽

Nir Tessler

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Low Voltage ◽

Field Effect Transistors ◽

Organic Field Effect Transistors

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Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal–oxide–semiconductor field effect transistors

Thin Solid Films ◽

10.1016/j.tsf.2016.09.062 ◽

2016 ◽

Vol 620 ◽

pp. 43-47

Author(s):

Ying-Hsin Lu ◽

Ting-Chang Chang ◽

Szu-Han Ho ◽

Ching-En Chen ◽

Jyun-Yu Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Layer ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication Method ◽

Nitrogen Diffusion

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Improved performance uniformity of inkjet printed n-channel organic field-effect transistors and complementary inverters

Organic Electronics ◽

10.1016/j.orgel.2011.01.016 ◽

2011 ◽

Vol 12 (4) ◽

pp. 634-640 ◽

Author(s):

Kang-Jun Baeg ◽

Dongyoon Khim ◽

Ju-Hwan Kim ◽

Minji Kang ◽

In-Kyu You ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Complementary Inverters ◽

Improved Performance

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Unipolarization of ambipolar organic field effect transistors toward high-impedance complementary metal-oxide-semiconductor circuits

Applied Physics Letters ◽

10.1063/1.2770963 ◽

2007 ◽

Vol 91 (7) ◽

pp. 071905 ◽

Author(s):

Wataru Takashima ◽

Tsutomu Murasaki ◽

Shuichi Nagamatsu ◽

Takeomi Morita ◽

Keiichi Kaneto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Organic Field Effect Transistors ◽

High Impedance ◽

Semiconductor Circuits

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