Metal–insulator transition in a quantum well under the influence of electric field

2005 ◽  
Vol 366 (1-4) ◽  
pp. 146-152 ◽  
Author(s):  
A. John Peter ◽  
K. Navaneethakrishnan
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation

Science ◽  
2013 ◽  
Vol 339 (6126) ◽  
pp. 1402-1405 ◽  
Author(s):  
J. Jeong ◽  
N. Aetukuri ◽  
T. Graf ◽  
T. D. Schladt ◽  
M. G. Samant ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Electric Field ◽  
Insulator Transition ◽  
Vacancy Formation ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Oxygen Vacancy Formation

scholarly journals Tuning of Metal–Insulator Transition of Quasi-Two-Dimensional Electrons at Parylene/SrTiO3 Interface by Electric Field

2009 ◽  
Vol 78 (8) ◽  
pp. 083713 ◽  
Author(s):  
Hiroyuki Nakamura ◽  
Hiroshi Tomita ◽  
Hikota Akimoto ◽  
Ryota Matsumura ◽  
Isao H. Inoue ◽  
...  
Keyword(s):  
Electric Field ◽  
Insulator Transition ◽  
Two Dimensional ◽  
Metal Insulator Transition ◽  
Metal Insulator

Transport properties of two-dimensional hole gas in a Ge1−x Si x /Ge/Ge1−x Si x quantum well in the vicinity of metal-insulator transition

2007 ◽  
Vol 41 (11) ◽  
pp. 1315-1322 ◽  
Author(s):  
Yu. G. Arapov ◽  
V. N. Neverov ◽  
G. I. Harus ◽  
N. G. Shelushinina ◽  
M. V. Yakunin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Transport Properties ◽  
Insulator Transition ◽  
Two Dimensional ◽  
Metal Insulator Transition ◽  
Metal Insulator

THE EFFECT OF HYDROSTATIC PRESSURE ON METAL–INSULATOR TRANSITION IN QUANTUM WELL SEMICONDUCTOR SYSTEMS II

2005 ◽  
Vol 04 (01) ◽  
pp. 45-53 ◽  
Author(s):  
A. JOHN PETER
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Ionization Energy ◽  
Critical Concentration ◽  
Shallow Donor ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Mass Approximation ◽  
The One

Using a variational procedure within the effective mass approximation, the ionization energies of a shallow donor in a quantum well (QW) of GaAs/Ga 1-x Al x As superlattice system under the influence of pressure with the exact dielectric function are obtained. The vanishing of ionization energy initiating Mott transition is observed within the one-electron approximation. The effects of Anderson localization using a simple model, and exchange and correlation in the Hubbard model are included in this model. It is found that the ionization energy (i) increases when well width increases for a given pressure, (ii) decreases and reaches a bulk value for a larger well width, (iii) increases with increasing external hydrostatic pressure for a given QW thickness, and (iv) the critical concentration at which the metal–insulator transition (MIT) occurs is increased when pressure is applied. It also is demonstrated that MIT is not possible in a hydrostatic pressure in a quantum well supporting scaling theory of localization. All the calculations have been carried out with finite and infinite barriers and the results are compared with available data in the literature.

Electric field induced metal–insulator transition in VO 2 thin film based on FTO/VO 2 /FTO structure

2016 ◽  
Vol 75 ◽  
pp. 82-86 ◽  
Author(s):  
Rulong Hao ◽  
Yi Li ◽  
Fei Liu ◽  
Yao Sun ◽  
Jiayin Tang ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator
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