Deep level transient spectroscopy signatures of majority traps in GaN p–n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4889-4891 ◽  
Author(s):  
E. PŁaczek-Popko ◽  
J. Trzmiel ◽  
E. Zielony ◽  
S. Grzanka ◽  
R. Czernecki ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Transient Spectroscopy

Intrinsic and oxygen-related deep level defects in In0.5(AlxGa1−x)0.5P grown by metal-organic vapor phase epitaxy

1998 ◽  
Vol 195 (1-4) ◽  
pp. 63-68 ◽  
Author(s):  
J.G. Cederberg ◽  
B. Bieg ◽  
J.-W. Huang ◽  
S.A. Stockman ◽  
M.J. Peanasky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Deep Level ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Electron Irradiation Induced Trap In N-Type Gan

1997 ◽  
Vol 482 ◽  
Author(s):  
Z-Q. Fang ◽  
J. W. Hemsky ◽  
D. C. Look ◽  
M. P. Mack ◽  
R. J. Molnar ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
Electric Field Effects ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
Organic Chemical Vapor Deposition

AbstractA 1-MeV-electron-irradiation (EI) induced trap at Ec-0.18 eV is found in n-type GaN by deep level transient spectroscopy (DLTS) measurements on Schottky barrier diodes, fabricated on both metal-organic-chemical-vapor-deposition and hydride-vapor-phase-epitaxy material grown on sapphire. The 300-K carrier concentrations of the two materials are 2.3 × 1016 cm−3 and 1.3 × 1017 cm−3, respectively. Up to an irradiation dose of 1 × 1015 cm−2, the electron concentrations and pre-existing traps in the GaN layers are not significantly affected, while the EI-induced trap is produced at a rate of at least 0.2 cm−1. The DLTS peaks in the two materials are shifted slightly, possibly due to electric-field effects. Comparison with theory suggests that the defect is most likely associated with the N vacancy or Ga interstitial.

Kinetic Analysis of InN Selective Area Metal–Organic Vapor Phase Epitaxy

2008 ◽  
Vol 1 ◽  
pp. 071102 ◽  
Author(s):  
Tomonari Shioda ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Kinetic Analysis ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic
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