Phonon spectrum and thermal properties of semiconducting compounds ZnS and ZnSe

AbstractThe dynamic and thermal properties of nanostructured materials based on aluminum with the periodic inclusions of Ti or Zr clusters have been investigated by the method of molecular dynamics. The elastic moduli, spectral vibrational densities of states, and temperature dependences of heat capacity for different Ti–Al and Zr–Al systems have been obtained. The effect of specific features of the phonon spectrum on the heat capacity of the nanocomposite lattice has been examined. It is shown that the ordering type and size of Ti/Zr clusters in the aluminum matrix significantly affect the elastic properties and heat capacity. The results obtained can be used for fabricating new aluminum-, titanium-, and zirconium-based composites with the desired properties.

Download Full-text

Derivation of new semiconducting compounds by cross substitution for group IV semiconductors, and their semiconducting and thermal properties

Solid-State Electronics ◽

10.1016/0038-1101(67)90146-3 ◽

1967 ◽

Vol 10 (10) ◽

pp. 975-981 ◽

Cited By ~ 26

Author(s):

T. Hirai ◽

K. Kurata ◽

Y. Takeda

Keyword(s):

Thermal Properties ◽

Group Iv ◽

Group Iv Semiconductors ◽

Semiconducting Compounds

Download Full-text

Luminescence from individual dislocations in II-VI and III-V semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088488 ◽

1991 ◽

Vol 49 ◽

pp. 834-835

Author(s):

J W Steeds

Keyword(s):

Group Iv ◽

Luminescence Properties ◽

Carrier Recombination ◽

Transmission Electron ◽

Wide Range ◽

Basic Physics ◽

Semiconducting Compounds ◽

Diamond Group ◽

Non Destructive ◽

Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

Download Full-text