Spin polarization in a double bend quantum wire with Rashba spin-orbit coupling

2010 ◽  
Vol 405 (17) ◽  
pp. 3581-3584
Author(s):  
Hang Li ◽  
Yuan Ping Chen ◽  
Yue E Xie ◽  
Jian Xin Zhong
2006 ◽  
Vol 23 (11) ◽  
pp. 3065-3068 ◽  
Author(s):  
Wang Yi ◽  
Sheng Wei ◽  
Zhou Guang-Hui

2019 ◽  
Vol 100 (12) ◽  
Author(s):  
Yulin Gan ◽  
Yu Zhang ◽  
Dennis Valbjørn Christensen ◽  
Nini Pryds ◽  
Yunzhong Chen

2010 ◽  
Vol 24 (07) ◽  
pp. 649-656
Author(s):  
XI FU ◽  
GUANGHUI ZHOU

We investigate theoretically the spin current and spin current induced electric field in a weak Rashba spin-orbit coupling quantum wire (QW) using a definition for spin current by means of scattering matrix. It is found that there exists two non-zero linear spin current density elements which have oscillation peaks at the center of QW and their strengths can be changed by the number of propagation modes and Rashba constant, respectively. Moreover, the spin current induced electric field has also been calculated and its strength is measurable with present technology with which can be used to detect spin current.


2008 ◽  
Vol 22 (27) ◽  
pp. 2667-2676 ◽  
Author(s):  
DE LIU ◽  
HONGMEI ZHANG

Based on the coherent quantum transport theory, the spin polarization and tunneling magnetoresistance for polarized electrons through ferromagnetic/semiconductor/ferromagnetic (FM/SM/FM) heterostructure are studied theoretically within the Landauer framework of ballistic transport. The significant quantum size, quantum coherent, angle between the magnetic moments of the left and right ferromagnets, and Rashba spin-orbit interaction are considered simultaneously. The results indicate that the spin polarization and tunneling magnetoresistance are periodic functions of the semiconductor channel length, quasiperiodic functions of the Rashba spin-orbit coupling strength, and depend on the relative orientation of the two magnetizations in the left and right ferromagnets. A moderate angle, semiconductor channel length, and Rashba spin-orbit coupling strength allow a giant spin polarization or tunneling magnetoresistance. The results may be of relevance for the implementation of quasi-one-dimensional spin-transistor devices.


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