External electric field and hydrostatic pressure effects on the binding energy and self-polarization of an off-center hydrogenic impurity confined in a GaAs/AlGaAs square quantum well wire

2012 ◽  
Vol 407 (13) ◽  
pp. 2637-2641 ◽  
Author(s):  
G. Rezaei ◽  
S. Mousavi ◽  
E. Sadeghi
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Well ◽  
External Electric Field ◽  
Pressure Effects ◽  
Hydrogenic Impurity ◽  
Quantum Well Wire

scholarly journals Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/AlxGa1−xN Strained Quantum Dots

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Guangxin Wang ◽  
Xiuzhi Duan ◽  
Wei Chen
Keyword(s):  
Quantum Dots ◽  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Effective Mass ◽  
Dielectric Constants ◽  
Pressure Effects ◽  
Physical Parameters ◽  
Barrier Thickness ◽  
Hydrogenic Impurity ◽  
Donor Binding Energy

Within the framework of the effective mass approximation, barrier thickness and hydrostatic pressure effects on the ground-state binding energy of hydrogenic impurity are investigated in wurtzite (WZ) GaN/AlxGa1−xN strained quantum dots (QDs) by means of a variational approach. The hydrostatic pressure dependence of physical parameters such as electron effective mass, energy band gaps, lattice constants, and dielectric constants is considered in the calculations. Numerical results show that the donor binding energy for any impurity position increases when the hydrostatic pressure increases. The donor binding energy for the impurity located at the central of the QD increases firstly and then begins to drop quickly with the decrease of QD radius (height) in strong built-in electric fields. Moreover, the influence of barrier thickness along the QD growth direction and Al concentration on donor binding energy is also investigated. In addition, we also found that impurity positions have great influence on the donor binding energy.

THE EFFECTS OF HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD ON SHALLOW DONOR IMPURITIES IN GaAs/GaAlAs GRADED QUANTUM WELL

2005 ◽  
Vol 12 (02) ◽  
pp. 155-159 ◽  
Author(s):  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Well ◽  
Quantum Confinement ◽  
Variational Approach ◽  
Shallow Donor ◽  
Impurity Position ◽  
Donor Binding Energy ◽  
Electric Field Direction

Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/GaAlAs graded quantum well (GQW). We have found that the changes in donor binding energy in GQW strongly depend not only on the quantum confinement, but also on the hydrostatic pressure, on the direction of the electric field and on the impurity position.

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