scholarly journals Controlling thermoelectric, heat, and energy currents through a quantum dot in sequential and cotunneling Coulomb-blockade regimes

2021 ◽  
pp. 413607
Author(s):  
Taha Yasin Ahmed ◽  
Nzar Rauf Abdullah ◽  
Vidar Gudmundsson
2001 ◽  
Vol 15 (10n11) ◽  
pp. 1426-1442
Author(s):  
L. I. GLAZMAN ◽  
F. W. J. HEKKING ◽  
A. I. LARKIN

The Kondo effect in a quantum dot is discussed. In the standard Coulomb blockade setting, tunneling between the dot and the leads is weak, the number of electrons in the dot is well-defined and discrete; the Kondo effect may be considered in the framework of the conventional one-level Anderson impurity model. It turns out however, that the Kondo temperature TK in the case of weak tunneling is extremely low. In the opposite case of almost reflectionless single-mode junctions connecting the dot to the leads, the average charge of the dot is not discrete. Surprisingly, its spin may remain quantized: s=1/2 or s=0, depending (periodically) on the gate voltage. Such a "spin-charge separation" occurs because, unlike an Anderson impurity, a quantum dot carries a broad-band, dense spectrum of discrete levels. In the doublet state, the Kondo effect develops with a significantly enhanced TK. Like in the weak-tunneling regime, the enhanced TK exhibits strong mesoscopic fluctuations. The statistics of the fluctuations is universal, and related to the Porter-Thomas statistics of the wave function fluctuations.


1996 ◽  
Vol 227 (1-4) ◽  
pp. 98-101 ◽  
Author(s):  
K. Fujii ◽  
W. Gödel ◽  
D.A. Wharam ◽  
S. Manus ◽  
J.P. Kotthaus ◽  
...  

2002 ◽  
Vol 12 (1-4) ◽  
pp. 827-829
Author(s):  
S.J. Geer ◽  
A.G. Davies ◽  
C.G. Smith ◽  
L.D. Macks ◽  
W.R. Tribe ◽  
...  

1999 ◽  
Vol 59 (16) ◽  
pp. R10441-R10444 ◽  
Author(s):  
F. Simmel ◽  
David Abusch-Magder ◽  
D. A. Wharam ◽  
M. A. Kastner ◽  
J. P. Kotthaus

2017 ◽  
Vol 26 (12) ◽  
pp. 1750201
Author(s):  
Hamed Aminzadeh ◽  
Mohammad Ali Dashti ◽  
Mohammad Miralaei

Room-temperature analog-to-digital converters (ADCs) based on nanoscale silicon (Si) quantum dot (QD)-based single-electron transistors (SETs) can be very attractive for high-speed processors embedded in future generation nanosystems. This paper focuses on the design and modeling of advanced single-electron converters suited for operation at room temperature. In contrast to conventional SETs with metallic QD, the use of sub-10-nm Si QD results in stable operation at room temperature, as the observable Coulomb blockade regime covers effectively the higher temperature range. Si QD-based SETs are also fully compatible with advanced CMOS technology and they can be manufactured using routine nanofabrication steps. At first, we present the principles of operation of Si SETs used for room-temperature operation. Possible flash-type ADC architectures are then investigated and the design considerations of possible Coulomb oscillation regimes are addressed. A modified design procedure is then introduced for [Formula: see text]-bit SET-based ADCs, and validated through simulation of a 3-bit ADC with a sampling frequency of 5 GS/s. The ADC core is comprised from a capacitive signal divider followed by three periodic symmetric functions (PSFs). Simulation results demonstrate the stability of output signals at the room-temperature range.


1996 ◽  
Vol 361-362 ◽  
pp. 623-626 ◽  
Author(s):  
K.A. Matveev ◽  
L.I. Glazman ◽  
H.U. Baranger

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