Effect of native point defects on the photocatalytic performance of ZnIn2S4

2022 ◽  
pp. 413674
Author(s):  
Siwakorn Sukharom ◽  
Adisak Boonchun ◽  
Pakpoom Reunchan ◽  
Sirichok Jungthawan ◽  
Sukit Limpijumnong ◽  
...  
Keyword(s):  
Point Defects ◽  
Photocatalytic Performance ◽  
Native Point Defects

Stability and mobility of native point defects in AlH3

2011 ◽  
Vol 509 ◽  
pp. S658-S661 ◽  
Author(s):  
Lars Ismer ◽  
Anderson Janotti ◽  
Chris G. Van de Walle
Keyword(s):  
Point Defects ◽  
Native Point Defects

Hg1-xCdxTe: Defect Structure Overview

1990 ◽  
Vol 216 ◽  
Author(s):  
M.A. Berding ◽  
A. Sher ◽  
A.-B. Chen
Keyword(s):  
Point Defects ◽  
Defect Structure ◽  
Defect Formation ◽  
Activation Energies ◽  
Mass Action ◽  
Native Defect ◽  
Native Point Defects ◽  
Vacancy Migration ◽  
Formation Energies ◽  
Diffusion Activation

ABSTRACTNative point defects play an important role in HgCdTe. Here we discuss some of the relevant mass action equations, and use recently calculated defect formation energies to discuss relative defect concentrations. In agreement with experiment, the Hg vacancy is found to be the dominant native defect to accommodate excess tellurium. Preliminary estimates find the Hg antisite and the Hg interstitial to be of comparable densities. Our calculated defect formation energies are also consistent with measured diffusion activation energies, assuming the interstitial and vacancy migration energies are small.

Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide

2006 ◽  
Vol 527-529 ◽  
pp. 717-720 ◽  
Author(s):  
Sashi Kumar Chanda ◽  
Yaroslav Koshka ◽  
Murugesu Yoganathan
Keyword(s):  
Low Temperature ◽  
Point Defects ◽  
Room Temperature ◽  
Vanadium Content ◽  
Mapping Technique ◽  
Native Defect ◽  
Room Temperature Photoluminescence ◽  
Native Point Defects ◽  
Pl Mapping ◽  
Resistivity Variation

A room temperature PL mapping technique was applied to establish the origin of resistivity variation in PVT-grown 6H SiC substrates. A direct correlation between the native defect-related PL and resistivity was found in undoped (V-free) samples. In vanadium-doped samples with low vanadium content, the resistivity showed a good correlation with the total PL signal consisting of contributions from both vanadium and native point defects. Well-known UD1 and UD3 levels were revealed by low-temperature PL spectroscopy. Some correlation was observed between these low-temperature PL signatures and the resistivity distribution.

Native point defects on hydrogen-passivated 4H–SiC (0001) surface and the effects on metal adsorptions

2017 ◽  
Vol 147 (2) ◽  
pp. 024707 ◽  
Author(s):  
Tingting Wang ◽  
Guiwu Liu ◽  
Yuanyuan Li ◽  
Haigang Hou ◽  
Ziwei Xu ◽  
...  
Keyword(s):  
Point Defects ◽  
Native Point Defects

scholarly journals Native point defects in few-layer phosphorene

2015 ◽  
Vol 91 (4) ◽  
Author(s):  
V. Wang ◽  
Y. Kawazoe ◽  
W. T. Geng
Keyword(s):  
Point Defects ◽  
Native Point Defects

scholarly journals Native point defects in Ti3GeC2 and Ti2GeC

2017 ◽  
Vol 128 ◽  
pp. 103-108
Author(s):  
M.H.N. Assadi ◽  
H. Katayama-Yoshida
Keyword(s):  
Point Defects ◽  
Native Point Defects

scholarly journals Simulations of Defect-Interface Interactions in GaN

2000 ◽  
Vol 5 (S1) ◽  
pp. 287-293
Author(s):  
J. A. Chisholm ◽  
P. D. Bristowe
Keyword(s):  
Electronic Structure ◽  
Binding Energy ◽  
Point Defects ◽  
Potential Model ◽  
Pair Potential ◽  
Planar Defects ◽  
Native Defects ◽  
Native Point Defects ◽  
Bulk Gan ◽  
Image Position

We report on the interaction of native point defects with commonly observed planar defects in GaN. Using a pair potential model we find a positive binding energy for all native defects to the three boundary structures investigated indicating a preference for native defects to form in these interfaces. The binding energy is highest for the Ga interstitial and lowest for vacancies. Interstitials, which are not thought to occur in significant concentrations in bulk GaN, should form in the (11 0) IDB and the (10 0) SMB and consequently alter the electronic structure of these boundaries.

Sign in / Sign up

Export Citation Format

Share Document