Effects of multi-subband occupation and electric field in ferromagnetic semiconductor quantum wells

2004 ◽  
Vol 21 (2-4) ◽  
pp. 1037-1040 ◽  
Author(s):  
Satofumi Souma ◽  
Seung Joo Lee ◽  
Tae Won Kang
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Ferromagnetic Semiconductor ◽  
Semiconductor Quantum Wells

INFLUENCE OF NONLINEAR ELECTRON MOBILITY ON RESPONSE TIME IN PHOTOREFRACTIVE SEMICONDUCTOR QUANTUM WELLS

2012 ◽  
Vol 21 (04) ◽  
pp. 1250050 ◽  
Author(s):  
MAREK WICHTOWSKI ◽  
ANDRZEJ ZIOLKOWSKI ◽  
EWA WEINERT-RACZKA ◽  
BLAZEJ JABLONSKI ◽  
WOJCIECH KARWECKI
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Hot Electrons ◽  
Nonlinear Transport ◽  
Field Range ◽  
Fringe Contrast ◽  
Recording Time ◽  
Semiconductor Quantum Wells ◽  
Charge Field

Nonlinear transport of hot electrons in semi-insulating GaAs / AlGaAs quantum wells significantly affects their photorefractive properties. In case of two waves mixing, this influence consists, among others, in an increased shift of photorefractive grating relative to light intensity distribution. The influence of nonlinear transport on grating recording time is less examined experimentally and theoretically. This study compares numerical and analytical solutions describing grating dynamics in approximation of small fringe contrast. The influence of nonlinear electron mobility on space-charge field was examined depending on external electric field intensity and on the grating constant. It was found that in the electric field range below 20 kV/cm, the nonlinear transport of electrons does not shorten the grating generation time.

scholarly journals Quantum-well thickness dependence of spin polarization of excitons

2011 ◽  
Vol 1 (1) ◽  
pp. 5
Author(s):  
M. Idrish Miah
Keyword(s):  
Phase Space ◽  
Electric Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
Spin Polarization ◽  
Optical Orientation ◽  
Space Filling ◽  
Circularly Polarized ◽  
Semiconductor Quantum Wells ◽  
Left And Right

The optical orientation of exciton spins in semiconductor quantum wells (SQWs) was investigated by observing the circular polarization of the photoluminescence (PL). The left/right circularly polarized PL in SQWs was measured. It was found that there is a difference between the two different polarization conditions, which is caused by spin-dependent phase-space filling. The PL polarization was estimated from the signals of the left and right circularly polarized PL and was found to depend on the well thickness of SQWs as well as on the sample temperature. The influence of an electric field on the PL polarization was studied.

Electric-field effects in semiconductor quantum wells

1991 ◽  
Vol 44 (8) ◽  
pp. 3880-3890 ◽  
Author(s):  
Witold Trzeciakowski ◽  
Massimo Gurioli
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Electric Field Effects ◽  
Field Effects ◽  
Semiconductor Quantum Wells
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