On the permanent dipole-induced two-level Raman scattering in semiconductor quantum wells in electric field

1990 ◽  
Vol 26 (2) ◽  
pp. 199-202 ◽  
Author(s):  
Z. Ikonic ◽  
V. Milanovic ◽  
D. Tjapkin
Keyword(s):  
Electric Field ◽  
Raman Scattering ◽  
Quantum Wells ◽  
Semiconductor Quantum Wells

INFLUENCE OF NONLINEAR ELECTRON MOBILITY ON RESPONSE TIME IN PHOTOREFRACTIVE SEMICONDUCTOR QUANTUM WELLS

2012 ◽  
Vol 21 (04) ◽  
pp. 1250050 ◽  
Author(s):  
MAREK WICHTOWSKI ◽  
ANDRZEJ ZIOLKOWSKI ◽  
EWA WEINERT-RACZKA ◽  
BLAZEJ JABLONSKI ◽  
WOJCIECH KARWECKI
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Hot Electrons ◽  
Nonlinear Transport ◽  
Field Range ◽  
Fringe Contrast ◽  
Recording Time ◽  
Semiconductor Quantum Wells ◽  
Charge Field

Nonlinear transport of hot electrons in semi-insulating GaAs / AlGaAs quantum wells significantly affects their photorefractive properties. In case of two waves mixing, this influence consists, among others, in an increased shift of photorefractive grating relative to light intensity distribution. The influence of nonlinear transport on grating recording time is less examined experimentally and theoretically. This study compares numerical and analytical solutions describing grating dynamics in approximation of small fringe contrast. The influence of nonlinear electron mobility on space-charge field was examined depending on external electric field intensity and on the grating constant. It was found that in the electric field range below 20 kV/cm, the nonlinear transport of electrons does not shorten the grating generation time.

Electron Raman Scattering in Semiconductor Quantum Wells

1988 ◽  
Vol 148 (2) ◽  
pp. 533-542 ◽  
Author(s):  
R. Riera ◽  
F. Comas ◽  
C. Trallero Giner ◽  
S. T. Pavlov
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Semiconductor Quantum Wells
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