INFLUENCE OF NONLINEAR ELECTRON MOBILITY ON RESPONSE TIME IN PHOTOREFRACTIVE SEMICONDUCTOR QUANTUM WELLS

2012 ◽  
Vol 21 (04) ◽  
pp. 1250050 ◽  
Author(s):  
MAREK WICHTOWSKI ◽  
ANDRZEJ ZIOLKOWSKI ◽  
EWA WEINERT-RACZKA ◽  
BLAZEJ JABLONSKI ◽  
WOJCIECH KARWECKI
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Hot Electrons ◽  
Nonlinear Transport ◽  
Field Range ◽  
Fringe Contrast ◽  
Recording Time ◽  
Semiconductor Quantum Wells ◽  
Charge Field

Nonlinear transport of hot electrons in semi-insulating GaAs / AlGaAs quantum wells significantly affects their photorefractive properties. In case of two waves mixing, this influence consists, among others, in an increased shift of photorefractive grating relative to light intensity distribution. The influence of nonlinear transport on grating recording time is less examined experimentally and theoretically. This study compares numerical and analytical solutions describing grating dynamics in approximation of small fringe contrast. The influence of nonlinear electron mobility on space-charge field was examined depending on external electric field intensity and on the grating constant. It was found that in the electric field range below 20 kV/cm, the nonlinear transport of electrons does not shorten the grating generation time.

Electric field effects on electron mobility inn-AlGaAs/GaAs/AlGaAs single asymmetric quantum wells

2002 ◽  
Vol 92 (9) ◽  
pp. 5296-5303 ◽  
Author(s):  
F. M. S. Lima ◽  
A. L. A. Fonseca ◽  
O. A. C. Nunes ◽  
Q. Fanyao
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Electric Field Effects ◽  
Field Effects ◽  
Asymmetric Quantum

scholarly journals Quantum-well thickness dependence of spin polarization of excitons

2011 ◽  
Vol 1 (1) ◽  
pp. 5
Author(s):  
M. Idrish Miah
Keyword(s):  
Phase Space ◽  
Electric Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
Spin Polarization ◽  
Optical Orientation ◽  
Space Filling ◽  
Circularly Polarized ◽  
Semiconductor Quantum Wells ◽  
Left And Right

The optical orientation of exciton spins in semiconductor quantum wells (SQWs) was investigated by observing the circular polarization of the photoluminescence (PL). The left/right circularly polarized PL in SQWs was measured. It was found that there is a difference between the two different polarization conditions, which is caused by spin-dependent phase-space filling. The PL polarization was estimated from the signals of the left and right circularly polarized PL and was found to depend on the well thickness of SQWs as well as on the sample temperature. The influence of an electric field on the PL polarization was studied.

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