The polaron effect on the binding energy of a shallow donor impurity in quantum-well wires in an electric field

2005 ◽  
Vol 27 (4) ◽  
pp. 447-456 ◽  
Author(s):  
Arshak L. Vartanian ◽  
Mkrtich A. Yeranosyan ◽  
Albert A. Kirakosyan
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
Quantum Well ◽  
Shallow Donor ◽  
Donor Impurity ◽  
Polaron Effect ◽  
Quantum Well Wires

Electronic and shallow donor impurity states in GaAs‐Ga1−xAlxAs quantum‐well wires: Effects of dielectric mismatch

1994 ◽  
Vol 75 (11) ◽  
pp. 7389-7393 ◽  
Author(s):  
Zhen‐Yan Deng ◽  
Ting‐Rong Lai ◽  
Jing‐Kun Guo ◽  
Shi‐Wei Gu
Keyword(s):  
Quantum Well ◽  
Shallow Donor ◽  
Donor Impurity ◽  
Impurity States ◽  
Quantum Well Wires ◽  
Dielectric Mismatch

OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

2012 ◽  
Vol 26 (06) ◽  
pp. 1250013 ◽  
Author(s):  
F. UNGAN ◽  
U. YESILGUL ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SOKMEN
Keyword(s):  
Binding Energy ◽  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Binding Energies ◽  
Intersubband Transitions ◽  
Mass Approximation ◽  
Intersubband Optical Absorption

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

THE EFFECTS OF HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD ON SHALLOW DONOR IMPURITIES IN GaAs/GaAlAs GRADED QUANTUM WELL

2005 ◽  
Vol 12 (02) ◽  
pp. 155-159 ◽  
Author(s):  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Well ◽  
Quantum Confinement ◽  
Variational Approach ◽  
Shallow Donor ◽  
Impurity Position ◽  
Donor Binding Energy ◽  
Electric Field Direction

Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/GaAlAs graded quantum well (GQW). We have found that the changes in donor binding energy in GQW strongly depend not only on the quantum confinement, but also on the hydrostatic pressure, on the direction of the electric field and on the impurity position.

Sign in / Sign up

Export Citation Format

Share Document