Advances in silicon photonic devices for silicon-based optoelectronic applications

AbstractThe mid-infrared (IR) wavelength region (2–20 µm) is of great interest for a number of applications, including trace gas sensing, thermal imaging, and free-space communications. Recently, there has been significant progress in developing a mid-IR photonics platform in Si, which is highly transparent in the mid-IR, due to the ease of fabrication and CMOS compatibility provided by the Si platform. Here, we discuss our group’s recent contributions to the field of silicon-based mid-IR photonics, including photonic crystal cavities in a Si membrane platform and grating-coupled high-quality factor ring resonators in a silicon-on-sapphire (SOS) platform. Since experimental characterization of microphotonic devices is especially challenging at the mid-IR, we also review our mid-IR characterization techniques in some detail. Additionally, pre- and post-processing techniques for improving device performance, such as resist reflow, Piranha clean/HF dip cycling, and annealing are discussed.

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An on-chip integrated microfiber–silicon–graphene hybrid structure photodetector

Laser Physics ◽

10.1088/1555-6611/ac3245 ◽

2021 ◽

Vol 31 (12) ◽

pp. 126207

Author(s):

Fangjie Wang ◽

Xiaoxu Chen ◽

Sikun Zhou ◽

Qiongqiong Gu ◽

Hao Zhou ◽

...

Keyword(s):

Rise Time ◽

Reverse Bias ◽

Near Infrared ◽

Hybrid Structure ◽

Photonic Devices ◽

Silicon Photonic ◽

On Chip ◽

Silicon Based

Abstract Silicon photonic devices have great potential for photocommunication, and silicon-based photodetectors have attracted wide attention. Here, we report an on-chip integrated microfiber–silicon–graphene hybrid structure photodetector that can operate in the visible and near-infrared ranges. The detector has a responsivity of ∼136 mA W−1 at 808 nm and a rise time of ∼1.1 μs. At a reverse bias of 5 V, we achieved a responsivity of ∼1350 mA W−1. Our device provides an option for on-chip integration.

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Modeling Silicon-Based Periodic Waveguides for Optical Interconnects

MRS Proceedings ◽

10.1557/opl.2012.1502 ◽

2012 ◽

Vol 1438 ◽

Author(s):

Meng-Mu Shih

Keyword(s):

Optical Waveguides ◽

Mode Coupling ◽

Optical Interconnects ◽

Hybrid Structure ◽

Photonic Devices ◽

Coupling Coefficients ◽

Silicon Photonic ◽

Metal Gratings ◽

Silicon Based ◽

Planar Optical Waveguides

ABSTRACTTo assist the precision and stability of wavelength at 1550 nm and 1300 nm in planar optical waveguides, hybrid semiconductor-metal corrugated gratings with nanometer period are integrated into silicon-based optical interconnects. This work utilizes multi-parametric optical waveguide models to compute the mode-coupling coefficients in the silicon photonic devices. For such a semiconductor-metal hybrid structure, a proper photonic technique needs to be utilized to solve this computational complexity. The optical method and the photonic method are used to compute coupling coefficients. Both methods have close numerical values shown in figures. Numerical results demonstrate how the normalized corrugation amplitudes of metal gratings can affect the coupling coefficients. Further physical interpretation and discussion can support and explain the above results. The modeling results can help engineers decide the values of parameters used in the design and fabrication of optical waveguides.

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Double-layer graphene on photonic crystal waveguide electro-absorption modulator with 12 GHz bandwidth

Nanophotonics ◽

10.1515/nanoph-2019-0381 ◽

2019 ◽

Vol 9 (8) ◽

pp. 2377-2385 ◽

Cited By ~ 4

Author(s):

Zhao Cheng ◽

Xiaolong Zhu ◽

Michael Galili ◽

Lars Hagedorn Frandsen ◽

Hao Hu ◽

...

Keyword(s):

Photonic Crystal ◽

Double Layer ◽

Slow Light ◽

Modulation Depth ◽

Photonic Crystal Waveguide ◽

Optical Modulators ◽

Layer Graphene ◽

Silicon Photonic ◽

On Chip ◽

Silicon Based

AbstractGraphene has been widely used in silicon-based optical modulators for its ultra-broadband light absorption and ultrafast optoelectronic response. By incorporating graphene and slow-light silicon photonic crystal waveguide (PhCW), here we propose and experimentally demonstrate a unique double-layer graphene electro-absorption modulator in telecommunication applications. The modulator exhibits a modulation depth of 0.5 dB/μm with a bandwidth of 13.6 GHz, while graphene coverage length is only 1.2 μm in simulations. We also fabricated the graphene modulator on silicon platform, and the device achieved a modulation bandwidth at 12 GHz. The proposed graphene-PhCW modulator may have potentials in the applications of on-chip interconnections.

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