An on-chip integrated microfiber–silicon–graphene hybrid structure photodetector

Laser Physics ◽  
2021 ◽  
Vol 31 (12) ◽  
pp. 126207
Author(s):  
Fangjie Wang ◽  
Xiaoxu Chen ◽  
Sikun Zhou ◽  
Qiongqiong Gu ◽  
Hao Zhou ◽  
...  
Keyword(s):  
Rise Time ◽  
Reverse Bias ◽  
Near Infrared ◽  
Hybrid Structure ◽  
Photonic Devices ◽  
Silicon Photonic ◽  
On Chip ◽  
Silicon Based

Abstract Silicon photonic devices have great potential for photocommunication, and silicon-based photodetectors have attracted wide attention. Here, we report an on-chip integrated microfiber–silicon–graphene hybrid structure photodetector that can operate in the visible and near-infrared ranges. The detector has a responsivity of ∼136 mA W−1 at 808 nm and a rise time of ∼1.1 μs. At a reverse bias of 5 V, we achieved a responsivity of ∼1350 mA W−1. Our device provides an option for on-chip integration.

Modeling Silicon-Based Periodic Waveguides for Optical Interconnects

2012 ◽  
Vol 1438 ◽  
Author(s):  
Meng-Mu Shih
Keyword(s):  
Optical Waveguides ◽  
Mode Coupling ◽  
Optical Interconnects ◽  
Hybrid Structure ◽  
Photonic Devices ◽  
Coupling Coefficients ◽  
Silicon Photonic ◽  
Metal Gratings ◽  
Silicon Based ◽  
Planar Optical Waveguides

ABSTRACTTo assist the precision and stability of wavelength at 1550 nm and 1300 nm in planar optical waveguides, hybrid semiconductor-metal corrugated gratings with nanometer period are integrated into silicon-based optical interconnects. This work utilizes multi-parametric optical waveguide models to compute the mode-coupling coefficients in the silicon photonic devices. For such a semiconductor-metal hybrid structure, a proper photonic technique needs to be utilized to solve this computational complexity. The optical method and the photonic method are used to compute coupling coefficients. Both methods have close numerical values shown in figures. Numerical results demonstrate how the normalized corrugation amplitudes of metal gratings can affect the coupling coefficients. Further physical interpretation and discussion can support and explain the above results. The modeling results can help engineers decide the values of parameters used in the design and fabrication of optical waveguides.

scholarly journals Double-layer graphene on photonic crystal waveguide electro-absorption modulator with 12 GHz bandwidth

Nanophotonics ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 2377-2385 ◽  
Author(s):  
Zhao Cheng ◽  
Xiaolong Zhu ◽  
Michael Galili ◽  
Lars Hagedorn Frandsen ◽  
Hao Hu ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Double Layer ◽  
Slow Light ◽  
Modulation Depth ◽  
Photonic Crystal Waveguide ◽  
Optical Modulators ◽  
Layer Graphene ◽  
Silicon Photonic ◽  
On Chip ◽  
Silicon Based

AbstractGraphene has been widely used in silicon-based optical modulators for its ultra-broadband light absorption and ultrafast optoelectronic response. By incorporating graphene and slow-light silicon photonic crystal waveguide (PhCW), here we propose and experimentally demonstrate a unique double-layer graphene electro-absorption modulator in telecommunication applications. The modulator exhibits a modulation depth of 0.5 dB/μm with a bandwidth of 13.6 GHz, while graphene coverage length is only 1.2 μm in simulations. We also fabricated the graphene modulator on silicon platform, and the device achieved a modulation bandwidth at 12 GHz. The proposed graphene-PhCW modulator may have potentials in the applications of on-chip interconnections.

Silicon photonic devices for mid-infrared applications

Nanophotonics ◽  
2014 ◽  
Vol 3 (4-5) ◽  
pp. 329-341 ◽  
Author(s):  
Raji Shankar ◽  
Marko Lončar
Keyword(s):  
Gas Sensing ◽  
Wavelength Region ◽  
Photonic Devices ◽  
Ring Resonators ◽  
Space Communications ◽  
Mid Infrared ◽  
Silicon Photonic ◽  
Processing Techniques ◽  
Silicon Based

AbstractThe mid-infrared (IR) wavelength region (2–20 µm) is of great interest for a number of applications, including trace gas sensing, thermal imaging, and free-space communications. Recently, there has been significant progress in developing a mid-IR photonics platform in Si, which is highly transparent in the mid-IR, due to the ease of fabrication and CMOS compatibility provided by the Si platform. Here, we discuss our group’s recent contributions to the field of silicon-based mid-IR photonics, including photonic crystal cavities in a Si membrane platform and grating-coupled high-quality factor ring resonators in a silicon-on-sapphire (SOS) platform. Since experimental characterization of microphotonic devices is especially challenging at the mid-IR, we also review our mid-IR characterization techniques in some detail. Additionally, pre- and post-processing techniques for improving device performance, such as resist reflow, Piranha clean/HF dip cycling, and annealing are discussed.

scholarly journals Multimode silicon photonics

Nanophotonics ◽  
2018 ◽  
Vol 8 (2) ◽  
pp. 227-247 ◽  
Author(s):  
Chenlei Li ◽  
Dajian Liu ◽  
Daoxin Dai
Keyword(s):  
Integrated Circuits ◽  
Silicon Photonics ◽  
Fundamental Mode ◽  
Optical Filters ◽  
Photonic Devices ◽  
Higher Order ◽  
Multimode Waveguide ◽  
Higher Order Modes ◽  
Silicon Photonic ◽  
On Chip

AbstractMultimode silicon photonics is attracting more and more attention because the introduction of higher-order modes makes it possible to increase the channel number for data transmission in mode-division-multiplexed (MDM) systems as well as improve the flexibility of device designs. On the other hand, the design of multimode silicon photonic devices becomes very different compared with the traditional case with the fundamental mode only. Since not only the fundamental mode but also the higher-order modes are involved, one of the most important things for multimode silicon photonics is the realization of effective mode manipulation, which is not difficult, fortunately because the mode dispersion in multimode silicon optical waveguide is very strong. Great progresses have been achieved on multimode silicon photonics in the past years. In this paper, a review of the recent progresses of the representative multimode silicon photonic devices and circuits is given. The first part reviews multimode silicon photonics for MDM systems, including on-chip multichannel mode (de)multiplexers, multimode waveguide bends, multimode waveguide crossings, reconfigurable multimode silicon photonic integrated circuits, multimode chip-fiber couplers, etc. In the second part, we give a discussion about the higher-order mode-assisted silicon photonic devices, including on-chip polarization-handling devices with higher-order modes, add-drop optical filters based on multimode Bragg gratings, and some emerging applications.

scholarly journals Electromechanically reconfigurable optical nano-kirigami

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Shanshan Chen ◽  
Zhiguang Liu ◽  
Huifeng Du ◽  
Chengchun Tang ◽  
Chang-Yin Ji ◽  
...  
Keyword(s):  
Near Infrared ◽  
Large Range ◽  
Three Dimensional ◽  
High Contrast ◽  
Si Substrate ◽  
High Modulation ◽  
Gold Nanostructure ◽  
Infrared Wavelengths ◽  
On Chip ◽  
Nano Electromechanical System

AbstractKirigami, with facile and automated fashion of three-dimensional (3D) transformations, offers an unconventional approach for realizing cutting-edge optical nano-electromechanical systems. Here, we demonstrate an on-chip and electromechanically reconfigurable nano-kirigami with optical functionalities. The nano-electromechanical system is built on an Au/SiO2/Si substrate and operated via attractive electrostatic forces between the top gold nanostructure and bottom silicon substrate. Large-range nano-kirigami like 3D deformations are clearly observed and reversibly engineered, with scalable pitch size down to 0.975 μm. Broadband nonresonant and narrowband resonant optical reconfigurations are achieved at visible and near-infrared wavelengths, respectively, with a high modulation contrast up to 494%. On-chip modulation of optical helicity is further demonstrated in submicron nano-kirigami at near-infrared wavelengths. Such small-size and high-contrast reconfigurable optical nano-kirigami provides advanced methodologies and platforms for versatile on-chip manipulation of light at nanoscale.

scholarly journals Development of a Mobile Analytical Chemistry Workstation Using a Silicon Electrochromatography Microchip and Capacitively Coupled Contactless Conductivity Detector

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 239
Author(s):  
Yineng Wang ◽  
Xi Cao ◽  
Walter Messina ◽  
Anna Hogan ◽  
Justina Ugwah ◽  
...  
Keyword(s):  
Capillary Electrochromatography ◽  
High Efficiency ◽  
Device Fabrication ◽  
Capacitively Coupled ◽  
Packaging Design ◽  
Design And Optimization ◽  
Nanofabrication Technique ◽  
On Chip ◽  
Silicon Based ◽  
Rapid Separations

Capillary electrochromatography (CEC) is a separation technique that hybridizes liquid chromatography (LC) and capillary electrophoresis (CE). The selectivity offered by LC stationary phase results in rapid separations, high efficiency, high selectivity, minimal analyte and buffer consumption. Chip-based CE and CEC separation techniques are also gaining interest, as the microchip can provide precise on-chip control over the experiment. Capacitively coupled contactless conductivity detection (C4D) offers the contactless electrode configuration, and thus is not in contact with the solutions under investigation. This prevents contamination, so it can be easy to use as well as maintain. This study investigated a chip-based CE/CEC with C4D technique, including silicon-based microfluidic device fabrication processes with packaging, design and optimization. It also examined the compatibility of the silicon-based CEC microchip interfaced with C4D. In this paper, the authors demonstrated a nanofabrication technique for a novel microchip electrochromatography (MEC) device, whose capability is to be used as a mobile analytical equipment. This research investigated using samples of potassium ions, sodium ions and aspirin (acetylsalicylic acid).

scholarly journals Toward Nonvolatile Switching in Silicon Photonic Devices

2021 ◽  
pp. 2000501
Author(s):  
Jorge Parra ◽  
Irene Olivares ◽  
Antoine Brimont ◽  
Pablo Sanchis
Keyword(s):  
Photonic Devices ◽  
Silicon Photonic
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